CSD19531Q5A

Vgs(th) (Max) @ Id:	3.3V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-VSONP (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.3W (Ta), 125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3870pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	48nC @ 10V
Series:	NexFET™
Rds On (Max) @ Id, Vgs:	6.4 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CSD19531Q5A is an N-channel metal–oxide–semiconductor field-effect transistor (MOSFET) developed and manufactured by CSMC (Changsha Semiconductor Manufacturing Co., Ltd.). It is a low voltage device with a drain voltage rating of 60V and a gate-source voltage (Vgs) of ±20V. The device has an on-state resistance of 13 mΩ, a breakdown voltage of 175V, and a maximum pulse current of 500A. It is a single field-effect transistor that is used for switching applications in a variety of electronic circuits.The working principle of a field-effect transistor (FET) is based on the principle of electrostatic control of a current. The device consists of a source, drain and gate electrodes. The source electrode is the input end and the drain electrode is the output end. The gate electrode is sandwiched in between the source and drain, and it is used to control the current between the electrodes. The input signal to the gate determines the current flowing between the source and drain. When a positive voltage is applied to the gate, an electric field is created which attracts electrons from the source to the drain, creating a conducting channel between the electrodes. When the positive voltage is removed, the electric field dissipates and the current flow through the channel is stopped.The CSD19531Q5A transistor is typically used for low voltage, low current switching applications. It can be used to control the output current of dc power supplies, as well as for switching signals in electronic circuits. It is particularly useful for controlling small motors and solenoids and is commonly used in consumer electronics such as cell phone handsets. It can also be used for Data Acquisition Systems, Small Signal Processing Circuits, Pulse Circuits, Relay Drivers, and Power Switching Applications.The CSD19531Q5A offers several advantages over other types of FETs, such as lower power consumption, a lower on-resistance, and a larger operating temperature range. It is a lower-cost alternative to other FETs and provides a highly reliable, rugged, and versatile switch. The device is easy to use, requires minimal external components, and is suitable for surface-mount designs. It also has a reliable on-state current rating and a low reverse recovery charge, which makes it well-suited for applications that require fast switching speeds.In conclusion, the CSD19531Q5A is an N-channel MOSFET developed and manufactured by Changsha Semiconductor Manufacturing Co., Ltd. It is designed for low voltage, low current switching applications and is commonly used in consumer electronics, data acquisition systems, pulse circuits, and power switching applications. It is a reliable, rugged, and versatile switch with a low on-state resistance, large operating temperature range, and a low reverse recovery charge.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description