CSD19531Q5AT

Gate Charge (Qg) (Max) @ Vgs:	48nC @ 10V
Base Part Number:	CSD19531
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-VSONP (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.3W (Ta), 125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3870pF @ 50V
Vgs (Max):	±20V
Series:	NexFET™
Vgs(th) (Max) @ Id:	3.3V @ 250µA
Rds On (Max) @ Id, Vgs:	6.4 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	100A (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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CSD19531Q5AT are insulated gate field-effect transistors (IGFETs) with exceedingly low on-resistance attributes that deliver high performance levels and improved system power, efficiency, and thermal management. As soon as a voltage is applied from the gate of the transistors, an electric field exists between the gate and drain junction, producing an inversion layer in the channel that allows current to move through the transistor as a conduction channel. The mobile charges in the channel may be conducts, holes, or both, depending on the polarity of the voltage. CSD19531Q5AT transistors are used in many diverse applications including motor drives, white goods, and automotive power systems.The CSD19531Q5AT transistors have a patented design that decreases the RDS(on), enabling higher efficiency and protection from overloading. As a result, the transistors have an extremely low-on resistance and are able to deliver higher levels of performance than traditional devices. The CSD19531Q5AT also have an external temperature sensor that is used to adjust the RDS(on) according to the device\'s temperature. This allows for improved internal thermal management and helps devices run more efficiently at higher temperatures.The CSD19531Q5AT transistors have a single-channel architecture and are designed to switch on or off a load. This is accomplished by controlling the voltage on the gate of the transistor. When a logic low level voltage is applied to the gate, the transistor moves into the cutoff state, disconnecting the drain from the source and preventing current flow. Conversely, when a logic high voltage is applied to the gate, the transistor moves into the saturation state, allowing current to flow between the drain and the source. This allows the device to be used as a switch to control the flow of current in an electric circuit.The CSD19531Q5AT also features a fast body-diode recovery time, which reduces power consumption when the device is operating in the saturation state. Additionally, the CSD19531Q5AT utilizes an adaptive sensing technology for improved EMI performance. This technique reduces the emission of electromagnetic interference and improves the overall performance and reliability of electric circuits.The CSD19531Q5AT transistors are available in three different packages: TO-220AB, D2Pak and D2Pak w.S. The TO-220AB package fits in standard SMD footprints and provides double-sided cooling for increased performance. The D2Pak and D2Pak w.S packages are designed for surface mount applications and provide superior heat conduction capacity.In conclusion, the CSD19531Q5AT transistors are an excellent choice for those who require low on-resistance, high performance and improved power efficiency in their power supply designs. The device’s fast body-diode recovery time, low EMI radiation and adaptive sensing technology makes it an ideal choice for numerous applications. By optimizing the design and combining multiple transistors in a single package, engineers are able to achieve better performance levels while keeping cost and complexity to a minimum.

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