Allicdata Part #: | 296-38913-2-ND |
Manufacturer Part#: |
CSD17381F4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 30V 3.1A 0402 |
More Detail: | N-Channel 30V 3.1A (Ta) 500mW (Ta) Surface Mount 3... |
DataSheet: | CSD17381F4 Datasheet/PDF |
Quantity: | 75000 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Package / Case: | 3-XFDFN |
Supplier Device Package: | 3-PICOSTAR |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 195pF @ 15V |
Vgs (Max): | 12V |
Gate Charge (Qg) (Max) @ Vgs: | 1.35nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 109 mOhm @ 500mA, 8A |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD17381F4 is a power MOSFET transistor from the Cree SiC (Silicon Carbide) product range. It is a single, N-Channel MOSFET transistor and is rated for 30V and 55A operation. This combination of low voltage and high current make the CSD17381F4 an ideal choice for various applications such as motor control, DC-DC converters, and switches.
The unique properties of the SiC material used in the construction of the CSD17381F4 ensure that it is a highly efficient device. That efficiency also translates into lower switching losses and therefore improved thermal performance. This makes the CSD17381F4 suitable for high power, thermally challenged applications.
The advantages of the CSD17381F4 also make it suitable for high frequency applications. The device\'s fast switching transition times and short settling times reduce switching losses and enable higher power conversion efficiency. These features enable applications such as soft switching, active rectification, and wireless power transfer.
The CSD17381F4 is built on a state-of-the-art fabrication process. This process uses a unique combination of SiC substrate, SiGe epitaxial layers, and multi-level metallization to ensure optimal performance. This process results in lower on-resistance and minimal gate charge, which means improved performance and greater power efficiency for applications that use the CSD17381F4.
The CSD17381F4 also offers excellent protection from over-voltage, over-current, and over-temperature events. This is thanks to its integrated protection circuits, which are designed to quickly reduce the power dissipation and protect the device from damage in the event of an over-current or over-voltage spike. The device also features low gate threshold voltage, so it is easy to drive and control.
Finally, the CSD17381F4 has an ultra-low EMI (electromagnetic interference) profile. This low EMI profile is created by its innovative construction, which limits the amount of electromagnetic radiation that is generated by the device. This helps to reduce system noise and improve the overall performance of electronic systems that use the CSD17381F4.
In summary, the CSD17381F4 is a highly efficient, low-power MOSFET transistor. Its combination of low voltage and high current ratings, high power efficiency, fast switching transition times, integrated protection circuits, and low EMI profile make it an ideal choice for many applications. From motor control and DC-DC converters to wireless power transfer and active rectification, the CSD17381F4 is an ideal solution for many high power, thermally challenged, and high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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