CSD17585F5

Vgs(th) (Max) @ Id:	1.7V @ 250µA
Package / Case:	3-XFDFN
Supplier Device Package:	3-PICOSTAR
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	380pF @ 15V
Vgs (Max):	20V
Gate Charge (Qg) (Max) @ Vgs:	5.1nC @ 10V
Series:	FemtoFET™
Rds On (Max) @ Id, Vgs:	27 mOhm @ 900mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	5.9A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The CSD17585F5 is a N-Channel Enhancement mode MOSFET manufactured by Texas Instruments. It is a three-terminal device consisting of source (S), drain (D) and gate (G) as its main terminals. It belongs to the family of MOSFETs single-component devices. The device can be used in applications such as computers, mobile phones, and other consumer electronics. The device consists of a P-type substrate, which acts as the gate insulator and a N-type silicon layer which acts as the conducting channel. The source terminal is connected to the negative potential of the power supply while the drain terminal is connected to the positive potential. The gate terminal is connected to an internal or external bias voltage. The device is constructed in an enhancement mode, meaning that there is a threshold voltage which must be exceeded in order to turn the device on. The working principle of the CSD17585F5 is just like any other MOSFET. When a gate bias is applied, it results in electrons in the conducting channel being attracted towards the gate terminal. This attraction results in the source and drain terminals being connected by a low-resistance channel. The CSD17585F5 operates in the enhancement mode which means that it requires a minimum gate voltage to be applied in order for the device to turn on. In addition to being used for digital logic functions, the CSD17585F5 can also be used in power applications. Due to its low on-resistance, it is widely used as a switch in circuits where control of high power is necessary. The device can be used in high-power switching applications such as DC-DC converters and motor control circuits. Lastly, the CSD17585F5 may also be used in analog applications. Due to its low on-resistance, the device can be used to amplify analog signals as well. This device can help reduce noise when used in amplifier circuits and may even be used as a controlled current source in certain applications. The CSD17585F5 is one of the most versatile MOSFETs in the market and is suitable for a variety of applications. It is an extremely useful device in both digital and analog applications. Its low on-resistance allows it to be used for a variety of high-power applications as well.

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