CSD17578Q5A Allicdata Electronics
Allicdata Part #:

296-48512-2-ND

Manufacturer Part#:

CSD17578Q5A

Price: $ 0.21
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 30V 25A 8VSON
More Detail: N-Channel 30V 25A (Ta) 3.1W (Ta), 42W (Tc) Surface...
DataSheet: CSD17578Q5A datasheetCSD17578Q5A Datasheet/PDF
Quantity: 2500
1 +: $ 0.21000
10 +: $ 0.20370
100 +: $ 0.19950
1000 +: $ 0.19530
10000 +: $ 0.18900
Stock 2500Can Ship Immediately
$ 0.21
Specifications
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSONP (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22.3nC @ 10V
Series: NexFET™
Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The CSD17578Q5A is a super-junction MOSFET which is designed for load switch applications. It has an advanced current spreading cell structure with a low gate charge, low on-resistance and good thermal characteristics, making it ideal for applications such as DC-DC converters, USB Type-C applications and hot swap devices. As a power MOSFET, the CSD17578Q5A offers high performance and reliability for a variety of applications.

The CSD17578Q5A features a high-voltage acquisition cell structure and a high-density substrate process. It provides optimum on-resistance with high performance, low gate charge and fast switching performance. The advanced low-profile square-type packages help to provide high-current density and thermal stability during operation. The device also has a low-capacitance body-drain structure, which reduces drain-source capacitance and allows for fast switching speeds.

The working principle of the CSD17578Q5A is similar to that of other MOSFET transistors. It consists of a metal-oxide-semiconductor (MOS) structure in which the PN junction between the substrate and the channel is reversed biased, forming an inversion layer. When a voltage is applied on the gate, this inversion layer is compressed, thereby providing a conductive channel between the drain and the source. This allows electrons to flow through the channel and controls the current between the drain and source.

The CSD17578Q5A is designed to be used in a variety of applications. It is ideal for DC-DC converters, USB Type-C applications, hot swap, and other power switch applications. It is also suitable for applications such as voltage-mode switch-mode power supplies, D-A and A-D converters, and LED lighting. In addition, it is suitable for automotive and industrial applications, as well as a range of consumer, communications, and computing systems.

In conclusion, the CSD17578Q5A is a highly efficient super-junction MOSFET designed for load switch applications. It offers high performance and reliability for a variety of applications, while providing fast switching speeds and low gate charge. It is suitable for a range of automotive, industrial, consumer, communications, and computing systems, as well as DC-DC converters, USB Type-C applications, and hot-swap operations. The working principle of this device is similar to that of other MOSFETs, with the inversion layer formed between the substrate and the channel.

The specific data is subject to PDF, and the above content is for reference

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