Allicdata Part #: | 296-24964-2-ND |
Manufacturer Part#: |
CSD16325Q5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 25V 5X6 100A 8SON |
More Detail: | N-Channel 25V 33A (Ta), 100A (Tc) 3.1W (Ta) Surfac... |
DataSheet: | CSD16325Q5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSON-CLIP (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 12.5V |
Vgs (Max): | +10V, -8V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 2 mOhm @ 30A, 8V |
Drive Voltage (Max Rds On, Min Rds On): | 3V, 8V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD16325Q5 is a single N-channel MOSFET that is ideal for switching and linear applications. It is manufactured with a custom fabrication process of high-voltage dielectric isolation and vertical N-channel peripheral drain structure. This device features relatively low on-resistance, good current handling capability, low tension drop, and stable operation.
The CSD16325Q5 is a power MOSFET with an absolute maximum voltage rating of -30 V and drain-source blocking voltage rating of 25 V. Moreover, it has a continuous drain current rating of max 270 A, and a maximum on-state R DS(ON) of 7 mΩ at 10 V.
CSD16325Q5 application fields include motor drives, power supplies, home appliances, switching power supplies, lighting, LEDs and solenoids. This device is suitable for use in all kinds of power devices, including IGBTs and SCRs, as well as in high-frequency switching and microcontrollers.
The CSD16325Q5 works on the principle of a source-drain bipolar junction MOSFET, commonly known as an S-D MOSFET. When the gate is turned on, the inversion layer of charge carriers forms at the N-Pn junction, which provides a conductive path between drain and source. With the gate turned off, the inversion layer is immediately depleted and the MOSFET shuts off. As the impedance through the dielectric layer is much higher than that across the inversion layer, the capacitance of an off-state MOSFET at its gate is typically lower than that of an on-state MOSFET.
The CSD16325Q5 is also self-protecting as it is capable of operating within its limit conditions without causing an immediate failure. Besides, its very low on-resistance and high current carrying capacity enables it to dissipate less heat and efficiently handle higher current. Moreover, its low power loss decreases the power dissipation on the system and thus enables higher operating efficiency. Lastly, when it is turned off, its input capacitance is very small, which makes it ideal for high-speed switching.
In conclusion, the CSD16325Q5’s technology design and features make it a reliable and efficient choice for applications such as motor drives, power supplies, home appliances, switching power supplies, lighting, LEDs and solenoids.
The specific data is subject to PDF, and the above content is for reference
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