CSD17578Q3AT

Vgs(th) (Max) @ Id:	1.9V @ 250µA
Package / Case:	8-PowerVDFN
Supplier Device Package:	8-VSONP (3x3.15)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.2W (Ta), 37W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1590pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	22.2nC @ 10V
Series:	NexFET™
Rds On (Max) @ Id, Vgs:	7.3 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	20A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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CSD17578Q3AT Application Field and Working Principle

CSD17578Q3AT is a N-Channel MOSFET manufactured by Texas Instruments with a breakdown voltage of 40V, 120A of continuous drain current, and a typical RDS(on) of 0.067 Ohm. It belongs to the CSD17578Q3AT product family, which offers benefits of low on-resistance, high current capability, low power consumption and low gate charge. This MOSFET can be used in applications such as CPU core supply for server processors, graphics processor supply for graphics cards, and power management for digital home appliances.The working principle of the CSD17578Q3AT is based on the current flow between its drain and source terminals when a voltage is applied to its gate. When the gate voltage is higher than the threshold voltage, the device will start to conduct current from its drain to the source node. This can be referred to as a "turn on" state. On the other hand, when the gate voltage is lower than the threshold voltage, most of the current will flow in the opposite direction and the device will be considered to be in a "turn off" state. Under these conditions, the device will be considered off and the current flow will be limited.When the gate of a CSD17578Q3AT is in the turn on state, the voltage drop between the source and the drain will be close to zero as very little resistance exists. This state is known as a "low RDS(on)" state. Therefore, when this MOSFET is turned on, it is capable of delivering large current with low power consumption.In addition, the CSD17578Q3AT can also be operated over a wide range of temperatures from -55° C to 150° C. This is an important feature as high temperatures can cause a large increase in power consumption when operating at higher currents. With such a wide operational temperature range, the CSD17578Q3AT can be used in a variety of applications where high temperature operation is required.Lastly, the CSD17578Q3AT utilizes a charge pump for better gate drive, resulting in a faster switching time. This is beneficial for applications that require high current transients, such as server processors and graphics cards, where the fastest possible switching times are desired.Overall, the CSD17578Q3AT is a high performance N-Channel MOSFET that offers low on-resistance, high current capability, low power consumption, low gate charge, and a wide operational temperature range. As such, it is suitable for applications such as CPU core supply for server processors, graphics processor supply for graphics cards, and power management for digital home appliances. It is also capable of being operated over a wide range of temperatures and uses a charge pump for better gate drive, providing faster switching times that is ideal for high current transients.

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