CSD19538Q3A Discrete Semiconductor Products |
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Allicdata Part #: | 296-44352-2-ND |
Manufacturer Part#: |
CSD19538Q3A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 100V 15A VSONP |
More Detail: | N-Channel 100V 15A (Ta) 2.8W (Ta), 23W (Tc) Surfac... |
DataSheet: | CSD19538Q3A Datasheet/PDF |
Quantity: | 1886 |
Series: | NexFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 59 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 3.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.3nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 454pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 2.8W (Ta), 23W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (3x3.15) |
Package / Case: | 8-PowerVDFN |
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The CSD19538Q3A is a single monolithically integrated field effect transistor (FET) that offers superior electrical performance in both device and system applications. The CSD19538Q3A is specifically designed for use in portable and commercial application electronic products, such as digital hearing aids, portable video players, digital cameras, and other applications, such as microwave radio and automotive electronics. This single FET device offers superior power handling capability and high-frequency switching performance. The CSD19538Q3A is available in both through-hole and surface mount packages in order to meet the most demanding system requirements.
The CSD19538Q3A is a highly integrated device consisting of a single FET field effect transistor, as well as a number of supporting components on the chip. The FET is a voltage-controlled device, and the gate voltage control is the key to the operation of the device. The FET is connected in such a way that the voltage applied to the gate controls the amount of current that flows through the device. The CSD19538Q3A is designed for use in systems where the gate voltage must be controlled precisely, but the current draw is minimal. The CSD19538Q3A is designed for high-frequency switching and high-power applications.
The CSD19538Q3A supports both N-Channel and P-Channel FETs, each with its own distinct characteristics. The N-Channel FET is perfect for use in circuits where voltage control is the main focus. The P-Channel FET is used in applications where current draw is the focus, such as RF amplifiers, power amplifiers and voltage regulators. The device also supports the use of multiple FETs in parallel, allowing current to be drawn from multiple sources, making the device ideal for applications such as battery management systems.
The CSD19538Q3A device offers superior switching performance, as well as low power consumption. The device is designed to work in an environment of high temperatures, high voltages and high frequencies. The device is highly resistant to overvoltage and electrical noise, making it ideal for use in very demanding electronic applications. Additionally, the device is highly resistant to electro-static discharge (ESD), making it suitable for use in harsh industrial and automotive environments.
The CSD19538Q3A is designed to support a wide range of applications and conditions. Its low temperature operation and low power characteristics make it ideal for use in commercial products such as cellular phones, digital hearing aids and other portable electronic products. Additionally, the CSD19538Q3A supports applications requiring higher voltage and high-frequency switching, as well as applications requiring high power handling capability. In all applications, the device is designed to provide superior electrical performance, reliability and flexibility.
The specific data is subject to PDF, and the above content is for reference
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