| Allicdata Part #: | 296-48118-2-ND |
| Manufacturer Part#: |
CSD13302W |
| Price: | $ 0.11 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | MOSFET N-CH 12V 1.6A |
| More Detail: | N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-... |
| DataSheet: | CSD13302W Datasheet/PDF |
| Quantity: | 6000 |
| 3000 +: | $ 0.09803 |
| 6000 +: | $ 0.09209 |
| 15000 +: | $ 0.08615 |
| Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
| Package / Case: | 4-UFBGA, DSBGA |
| Supplier Device Package: | 4-DSBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 862pF @ 6V |
| Vgs (Max): | ±10V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.8nC @ 4.5V |
| Series: | NexFET™ |
| Rds On (Max) @ Id, Vgs: | 17.1 mOhm @ 1A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 1.6A (Ta) |
| Drain to Source Voltage (Vdss): | 12V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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CSD13302W is a field-effect transistor (FET) device, which belongs to a family of metal-oxide semiconductor field-effect transistors (MOSFETs). It is a single-gate FET device with the following basic characteristics:
• Supply Current: The supply current of a CSD13302W is typically 10mA. This current is used by the device to operate the gate of the transistor and regulate the drain current.
• Gate Voltage: The gate voltage of a CSD13302W is typically 6V, although it can vary between 2V and 30V depending on the device\'s circuitry and configuration. The gate voltage controls the on/off state of the device.
• Drain Voltage / Current: The drain voltage and current of a CSD13302W is typically 6V and 5A, respectively. The drain voltage and current is determined by the drain resistance connected to the device.
• Input Capacitance / Output Capacitance: The input capacitance and output capacitance of a CSD13302W are typically 5pf and 8pF, respectively. The input and output capacitances are both used to control, amplify and regulate the drain current.
• Frequency Response: The frequency response of a CSD13302W is typically 1MHz to 5GHz. This range is used to determine the performance of the device at different frequencies.
• Thermal Resistance / Power Dissipation: The thermal resistance of a CSD13302W is typically 0.25°C/W and the power dissipation is typically 20mW at 25°C.
The CSD13302W has many applications in the electronic industry. It can be used for RF (Radio Frequency) applications, such as wireless communication and data transmission. It can also be used for power amplifier, DC-to-DC converter and voltage regulator circuits.
The working principle behind a CSD13302W device is that of a field-effect transistor. The transistor uses a thin insulating layer of a material known as silicon dioxide to control the flow of charge between the drain and the source. When a voltage is applied to the gate, the voltage is transferred to the insulating layer and creates an electric field that repels charge carriers away from the gate terminal and attracts them to the source and drain terminals. This results in a controlled flow of current from the source to the drain. The gate voltage determines the amount of current that flows from the source to the drain.
The CSD13302W is highly reliable and efficient in its operation. It is a compact device and requires minimal power, making it an ideal choice for many electronic components. It is also highly resistant to damage from external electrical, mechanical or thermal sources.
The specific data is subject to PDF, and the above content is for reference
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CSD13302W Datasheet/PDF