| Allicdata Part #: | 296-24525-2-ND |
| Manufacturer Part#: |
CSD16401Q5 |
| Price: | $ 0.82 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | MOSFET N-CH 25V 100A 8-SON |
| More Detail: | N-Channel 25V 38A (Ta), 100A (Tc) 3.1W (Ta) Surfac... |
| DataSheet: | CSD16401Q5 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.82000 |
| 10 +: | $ 0.79540 |
| 100 +: | $ 0.77900 |
| 1000 +: | $ 0.76260 |
| 10000 +: | $ 0.73800 |
| Vgs(th) (Max) @ Id: | 1.9V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-VSON-CLIP (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 12.5V |
| Vgs (Max): | +16V, -12V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 4.5V |
| Series: | NexFET™ |
| Rds On (Max) @ Id, Vgs: | 1.6 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 38A (Ta), 100A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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CSD16401Q5 is one of the most popular and widely used Field Effect Transistors (FETs). It is a single-borne FET, a type of FET used in many electronic applications. It is a P-channel enhancement mode FET that can be used as a switch or amplifier. The FET is widely used in a variety of applications across fields such as computing, communications, industrial and automotive.
A FET is a three-terminal device. The terminals are called source, drain, and gate. It is a voltage-controlled device. The source is the source of current flow, the drain is the destination, and the gate is the control. When a voltage appears between the source and the gate, a voltage is created across the drain and the source. The voltage between the drain and the source is known as the drain-source voltage, or VDS for short. This voltage causes electrons to flow between the drain and the source.
In the case of the CSD16401Q5 FET, it is a P-channel FET. This means that current will flow in the opposite direction of the flow of negative charges, which is from the source to the drain. To turn on the FET, a voltage needs to be applied to the gate. This voltage is known as the gate-source voltage, or VGS. The gate-source voltage is responsible for controlling the amount of current that flows between the drain and the source.
The CSD16401Q5 FET is widely used in a number of applications. It is used as the power switch for voltage regulators, motor control circuits, LED drivers, and other power control applications. It is also widely used as a variable resistor in media applications such as volume control and tone control. The FET\'s low on-resistance, low leakage current, and high frequency operation make it ideal for these applications.
The CSD16401Q5 FET has also found its way into industrial and automotive applications. It is commonly used as an amplifier, switching regulator, and in analog circuit design. The FET\'s low input capacitance, high frequency operation, and low on-resistance make it ideal for these applications.
The CSD16401Q5 FET is also used in a variety of communications applications. The FET\'s low input capacitance and high frequency allow it to be used in high-speed communications applications. It can be used as a power switch, voltage and current regulator, amplifier, or even a clock driver in these applications.
In summary, the CSD16401Q5 FET is a popular and versatile single-borne FET with a number of applications across various fields. Its low on-resistance, high frequency operation, and low leakage current make it ideal for many types of applications, including power control, analog circuit design, communications and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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CSD16401Q5 Datasheet/PDF