
CSD16413Q5A Discrete Semiconductor Products |
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Allicdata Part #: | 296-24524-2-ND |
Manufacturer Part#: |
CSD16413Q5A |
Price: | $ 0.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 25V 100A 8-SON |
More Detail: | N-Channel 25V 24A (Ta), 100A (Tc) 3.1W (Ta) Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.46000 |
10 +: | $ 0.44620 |
100 +: | $ 0.43700 |
1000 +: | $ 0.42780 |
10000 +: | $ 0.41400 |
Vgs(th) (Max) @ Id: | 1.9V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-VSONP (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1780pF @ 12.5V |
Vgs (Max): | +16V, -12V |
Gate Charge (Qg) (Max) @ Vgs: | 11.7nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 24A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD16413Q5A is an enhanced version of the Monolithic Central Semiconductor’s (MCS) low-voltage dual N-Channel MOSFET family. The transistors are designed for low-voltage and low-current surface-mount applications, making them suitable for various other electronic applications such as power management, circuit protection, and RF switching. In this article, we will look at the application field of the CSD16413Q5A and how it works.
Applications of the CSD16413Q5A
The CSD16413Q5A has a number of uses in the field of Embedded Systems. The low-voltage and low-current design of the transistors makes them ideal for use in power management systems, where they can be used to regulate the power supplied to the system and thus improve efficiency. This makes them ideal for embedded systems such as computers, tablets, and mobile devices.
The transistors can also be used in high-frequency switching applications, where they can switch between different frequency bands with ease. This makes them suitable for use in radios, television receivers, and other electronic devices. In addition, they are widely used in the industrial field, where they can be used to regulate temperature or to control power levels.
The CSD16413Q5A is also suitable for use in audio applications, in which they can be used to eliminate noise, as well as boost and control the audio signal. They are also used in the automotive industry to control various functions of the vehicle, including the fuel system, climate control, and emission control.
Working Principle of the CSD16413Q5A
The CSD16413Q5A employs MOSFET technology to provide enhanced performance. This type of transistor is a modification of the field effect transistor (FET), which typically consists of two n-type and two p-type layers of semiconductor material, separated by an insulating layer called a gate oxide. In the MOSFET, the insulating gate oxide is replaced by a metal oxide gate, which can be used to control the flow of charge carriers.
The CSD16413Q5A is a dual N-channel MOSFET, which means that it has two N-channel transistors in its structure. When a voltage is applied to the gate, it causes a current known as a “gate current” to flow across the device, which in turn opens a conducting channel between the source and the drain of the device. This allows charge carriers to flow between the source and the drain and thus enabling the device to control the flow of current.
As a result, the CSD16413Q5A can be used in a variety of applications, such as low-voltage and low-current power management applications, high-frequency switching applications, and audio applications. The dual N-channel structure of the device also allows for increased control and flexibility. Additionally, the device can be used in a variety of temperature ranges, making it ideal for use in embedded systems.
Conclusion
The CSD16413Q5A is an enhanced version of the MCS low-voltage dual N-Channel MOSFET family. The device is suitable for a number of different applications, including power management, circuit protection, and RF switching. Additionally, the dual N-channel structure of the device allows for increased control and flexibility. As a result, the CSD16413Q5A is a versatile transistor, which can be used in a variety of applications, making it an ideal choice for embedded systems, audio applications, and other electronic devices.
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