CSD17581Q5A Allicdata Electronics
Allicdata Part #:

296-49602-2-ND

Manufacturer Part#:

CSD17581Q5A

Price: $ 0.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: 30V N CH MOSFET
More Detail: N-Channel 30V 24A (Ta), 123A (Tc) 3.1W (Ta), 83W (...
DataSheet: CSD17581Q5A datasheetCSD17581Q5A Datasheet/PDF
Quantity: 2500
1 +: $ 0.28000
10 +: $ 0.27160
100 +: $ 0.26600
1000 +: $ 0.26040
10000 +: $ 0.25200
Stock 2500Can Ship Immediately
$ 0.28
Specifications
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSONP (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Series: NexFET™
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The CSD17581Q5A is a N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It features an enhanced ultra-low gate charge with low resistance and is designed to deliver high power density performance. It is a compact and highly reliable FET, indicating its versatility and excellent performance.

The CSD17581Q5A is ideal for a range of applications, including power and linear switching; voltage regulation; power factor correction; audio power amplifiers; and on-board power systems. Its features and performance allow for cost-effective solutions for both designers and applications.

The CSD17581Q5A\'s working principle is based on the MOSFET. Its core component is an insulated gate bipolar transistor (IGBT), which is a power semiconductor that combines elements of both MOSFETs and bipolar transistors. It has an insulated gate electrode which is used to control the current flowing through it. The electrons in the FET are able to pass through the insulated gate without any resistance, and the current is determined by the voltage applied to the gate.

The CSD17581Q5A uses the P-channel version of the JFET to help provide a low-resistance switch. The JFET has a normally-closed switch configuration, which means that, when no voltage is applied to the gate, it will remain closed. As the gate voltage increases, the switch can be opened, allowing the flow of current to increase.

The CSD17581Q5A also has an increase in breakdown voltage, which helps to improve its current conduction performance. This allows the component to be used in applications that require higher voltages compared to its size. Thanks to its unique design and excellent performance, it can be used in a variety of applications ranging from medical systems to power converters.

The CSD17581Q5A is a powerful, reliable and compact MOSFET that is ideal for a range of low-to-high-power applications. Thanks to its enhanced ultra-low gate charge and low resistance profile, it enables cost-effective solutions for both designers and applications. Its unique design and excellent performance make it an ideal component for a variety of applications, from medical systems to power converters.

The specific data is subject to PDF, and the above content is for reference

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