| Allicdata Part #: | 296-49602-2-ND |
| Manufacturer Part#: |
CSD17581Q5A |
| Price: | $ 0.28 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Texas Instruments |
| Short Description: | 30V N CH MOSFET |
| More Detail: | N-Channel 30V 24A (Ta), 123A (Tc) 3.1W (Ta), 83W (... |
| DataSheet: | CSD17581Q5A Datasheet/PDF |
| Quantity: | 2500 |
| 1 +: | $ 0.28000 |
| 10 +: | $ 0.27160 |
| 100 +: | $ 0.26600 |
| 1000 +: | $ 0.26040 |
| 10000 +: | $ 0.25200 |
| Vgs(th) (Max) @ Id: | 1.7V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-VSONP (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 155°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 83W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3640pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 54nC @ 10V |
| Series: | NexFET™ |
| Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 16A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Ta), 123A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The CSD17581Q5A is a N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It features an enhanced ultra-low gate charge with low resistance and is designed to deliver high power density performance. It is a compact and highly reliable FET, indicating its versatility and excellent performance.
The CSD17581Q5A is ideal for a range of applications, including power and linear switching; voltage regulation; power factor correction; audio power amplifiers; and on-board power systems. Its features and performance allow for cost-effective solutions for both designers and applications.
The CSD17581Q5A\'s working principle is based on the MOSFET. Its core component is an insulated gate bipolar transistor (IGBT), which is a power semiconductor that combines elements of both MOSFETs and bipolar transistors. It has an insulated gate electrode which is used to control the current flowing through it. The electrons in the FET are able to pass through the insulated gate without any resistance, and the current is determined by the voltage applied to the gate.
The CSD17581Q5A uses the P-channel version of the JFET to help provide a low-resistance switch. The JFET has a normally-closed switch configuration, which means that, when no voltage is applied to the gate, it will remain closed. As the gate voltage increases, the switch can be opened, allowing the flow of current to increase.
The CSD17581Q5A also has an increase in breakdown voltage, which helps to improve its current conduction performance. This allows the component to be used in applications that require higher voltages compared to its size. Thanks to its unique design and excellent performance, it can be used in a variety of applications ranging from medical systems to power converters.
The CSD17581Q5A is a powerful, reliable and compact MOSFET that is ideal for a range of low-to-high-power applications. Thanks to its enhanced ultra-low gate charge and low resistance profile, it enables cost-effective solutions for both designers and applications. Its unique design and excellent performance make it an ideal component for a variety of applications, from medical systems to power converters.
The specific data is subject to PDF, and the above content is for reference
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CSD17581Q5A Datasheet/PDF