CSD19501KCS Allicdata Electronics
Allicdata Part #:

296-37286-5-ND

Manufacturer Part#:

CSD19501KCS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 80V 100A TO220
More Detail: N-Channel 80V 100A (Ta) 217W (Tc) Through Hole TO-...
DataSheet: CSD19501KCS datasheetCSD19501KCS Datasheet/PDF
Quantity: 1015
Stock 1015Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 217W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: NexFET™
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The CSD19501KCS is a type of insulated gate bipolar transistor (IGBT) used in many applications. It is designed using a simple and cost-effective structure that can control large amounts of current and voltage with high speed switching. IGBTs are commonly used in motor drives, power conversion and HVAC systems. This article is aimed to discuss the application field and working principle of the CSD19501KCS.

This IGBT has a maximum drain current of 200A and a voltage rating of up to 800V. It also features low on-state resistance (Rdson) and a fast turn-on time. Due to its simple and cost effective design, the CSD19501KCS is widely used in many applications. It is commonly used in DC motor drives, home appliances, lighting, renewable energy and scalar power supplies, as well as many other industrial, automotive and aerospace applications.

In terms of its working principle, the CSD19501KCS consists of two parts, a p-type metal oxide semiconductor field-effect transistor (MOSFET) and a bipolar power transistor. The MOSFET forms the main switch, while the bipolar transistor is used for current modulation. This configuration allows for controlled switching at low frequencies without the need for an external driver circuit. The MOSFET has a gate voltage of 6V for Turn-On and 0V for Turn-Off, making it simple and reliable to use.

The MOSFET works by controlling the conduction of current between two regions in the device. When the gate voltage is increased to the threshold voltage Vth, the channel is opened and current starts to flow through the MOSFET. When the gate voltage is decreased to 0V, the channel is shut off and no current can flow. This allows the MOSFET to act as an on-off switch, which can be used to control the current in the device. The bipolar transistor is used to modulate the current through the device, by providing an external control voltage.

The CSD19501KCS can be used in a variety of applications, ranging from motor drives and power supplies to HVAC systems. Its simple and cost effective design makes it an attractive option for businesses seeking a reliable and efficient IGBT. Its fast switching speed and low on-state resistance make it suitable for many applications that require a fast and efficient control of current.

In conclusion, the CSD19501KCS is a reliable, efficient, and cost-effective IGBT that is used in many applications. It is composed of a MOSFET and a bipolar transistor for current modulation, making it simple and reliable to use. Its small size, fast switching speed and low Rdson make it suitable for many different applications. With its wide range of applications, it is sure to benefit a variety of businesses.

The specific data is subject to PDF, and the above content is for reference

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