CSD19534Q5A Allicdata Electronics
Allicdata Part #:

296-43636-2-ND

Manufacturer Part#:

CSD19534Q5A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET N-CH 100V 50 8SON
More Detail: N-Channel 100V 50A (Ta) 3.2W (Ta), 63W (Tc) Surfac...
DataSheet: CSD19534Q5A datasheetCSD19534Q5A Datasheet/PDF
Quantity: 15000
Stock 15000Can Ship Immediately
Specifications
Series: NexFET™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 15.1 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 50V
FET Feature: --
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-VSONP (5x6)
Package / Case: 8-PowerTDFN
Description

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The CSD19534Q5A is a type of field effect transistor, or FET, specifically a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is considered a “single” device, meaning that it has one source, one drain, and one control gate. This type of transistor is designed to be very efficient in terms of power and space, making it suitable for a wide variety of applications.

MOSFET Application Field

MOSFETs are able to switch very quickly, so are used in high-frequency switching applications such as pulse-width modulation (PWM) control, oscillators, and switching power supplies. Additionally, MOSFETs can handle very high currents and are used in Class D power amplifiers and in motor controllers.

In the world of audio processing, MOSFETs are often used because they can deliver precise switching actions while still providing reliable and fast response.

In the automotive field, MOSFETs are used in electronic fuel injection systems, vehicle electronic braking systems, and even in the headlights of some vehicles.

MOSFET Working Principle

The CSD19534Q5A is a metal oxide semiconductor field effect transistor, which works by applying an electric field to a metal oxide semiconductor material (such as silicon) to regulate current from the source to the drain. This is achieved through the metal oxide material being a very good insulator, so that when a voltage is applied to the metal oxide layer, it causes current to flow from the source to the drain, rather than passing through the gate as it would in other types of FETs.

The MOSFET contains a parallelogram shaped channel of semiconductor material between the source and the drain, and this is where the electric field is formed. The source and drain are connected to each other through this channel, so when the voltage is applied, current is passed through the channel, which is then regulated by the electric field.

At the same time, the voltage applied to the gate is used to control the electric field, and thus the amount of current passing through the channel. When the voltage is higher, the electric field is stronger, and more current can pass through the channel. When the voltage is lower, the electric field is weaker, and less current can flow. This enables the MOSFET to act as a switch, and makes it very useful in many different applications.

Conclusion

The CSD19534Q5A is a type of Metal Oxide Semiconductor Field Effect Transistor, commonly referred to as a MOSFET. This type of transistor is very efficient in terms of power and space, and it is used in a variety of applications, such as high-frequency switching, Class D power amplifiers, and vehicle electronic braking systems. The working principle of the MOSFET is that an electric field is applied to a metal oxide material to regulate the current flow between the source and the drain, and that this field is controlled by the voltage applied to the gate.

The specific data is subject to PDF, and the above content is for reference

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