
Allicdata Part #: | 296-37288-5-ND |
Manufacturer Part#: |
CSD19535KCS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET N-CH 100V TO-220 |
More Detail: | N-Channel 100V 150A (Ta) 300W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 5684 |
Vgs(th) (Max) @ Id: | 3.4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7930pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 101nC @ 10V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 3.6 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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CSD19535KCS is a type of Field Effect Transistor (FET) manufactured by NXP Semiconductors. Its main application field is power semiconductor applications like switching and amplification. This semiconductor device works based on the principle of electrostatic control of current flow. A gate electric field is applied to the region between the drain and source, which generates a depletion layer. With this layer, a non-conductive barrier is created and current flow between the drain and the source is controlled. This feature makes it suitable to be used as a switch or an amplifier.
The CSD19535KCS is a single-channel FET with an integrated body diode. This type of FET has most of the features of a regular FET, like high efficiency, low compliance voltage and low capacitance, but with the added benefit of the integrated diode providing reverse-current protection. To use it, a gate voltage is applied to the Gate Pin. For threshold voltage, the range is 0.1 V to 0.4 V. When a voltage higher than this threshold is applied, the device starts operating in a fully-enhanced mode. Another advantage of the CSD19535KCS is that it has built-in thermal protection; this prevents an uncontrollable current from flowing and causing damage.
The CSD19535KCS has a typical maximum drain current of 6.7 A and drain-source voltage of 30 V. It works well with low voltage devices of 5 V and ones that use higher voltages as well. It has a drain-source on-resistance of 18 milliohms and an Avalanche Ruggedness of 33 V. This FET comes in an SO-8NS package and has a thermal resistance of 175 vermilion per watt.
The CSD19535KCS is suitable for applications such as motor and lighting control, power supplies, pan tilt camera systems and motion control. Being a single-channel FET, it can be used to build single-phase or two-phase motor control circuits, or as an amplifier in LED driver systems. Another advantage is that due to its small size, low power consumption and higher-than-average efficiency, it can be easily integrated into a variety of systems.
The CSD19535KCS is a highly reliable and efficient FET with many advantages. Its low temperature stability marked by its very low temperature-dependent power losses makes it the perfect choice for power conversion applications. Its built-in diode also makes it a more stable and flexible device than regular FETs. The CSD19535KCS is a great choice for low-voltage applications, such as LED driving and motor control. Its small size, low-profile package and robust performance make it an ideal device for various projects. With its thermal protection feature, it is a reliable and efficient device for power conversion applications.
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