Allicdata Part #: | 296-28216-2-ND |
Manufacturer Part#: |
CSD86330Q3D |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET 2N-CH 25V 20A 8SON |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 25V 20A 6W ... |
DataSheet: | CSD86330Q3D Datasheet/PDF |
Quantity: | 25000 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Base Part Number: | CSD86330 |
Supplier Device Package: | 8-LSON (3.3x3.3) |
Package / Case: | 8-PowerLDFN |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 6W |
Input Capacitance (Ciss) (Max) @ Vds: | 920pF @ 12.5V |
Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 4.5V |
Series: | NexFET™ |
Rds On (Max) @ Id, Vgs: | 9.6 mOhm @ 14A, 8V |
Current - Continuous Drain (Id) @ 25°C: | 20A |
Drain to Source Voltage (Vdss): | 25V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Half Bridge) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CSD86330Q3D Active Cell Array (ACA) is a monolithic device designed to provide wide dynamic range and stability of operation, as well as performance comparable to more expensive discrete FET arrays. The CSD86330Q3D can be used in a wide range of applications, such as audio, video and instrumentation, where multiple FETs are needed. It offers an unmatched combination of performance, functionality and cost.
The CSD86330Q3D is an innovative device that combines several types of FET transistors and arrays into one device. It offers a wide range of features compared to other FET arrays. It is capable of providing higher gain and better linearity, due to the advanced FET technology employed in its manufacturing process. The device is also highly flexible, allowing for the use of various biasing techniques and different power configurations.
The CSD86330Q3D has a total of 32 active cells arranged in a 4x8 array. Each cell consists of two N-Channel trench MOSFETs, one of which is an advanced S-type FET, while the other is used as a biasing transistor. The S-type FET is used as a main switch, allowing for higher gain and better linearity. The biasing transistor is used to set the drain-source voltage of the main switch, allowing for a wide range of voltage configurations.
The CSD86330Q3D employs a number of technologies to achieve superior performance. First, it uses power management technology to reduce power consumption while improving performance. It also uses a low voltage gate biasing technology to ensure fast switching and low power consumption. Finally, it has a low current gate biasing technology, which allows for high-current capability.
The CSD86330Q3D is an ideal device for audio, video and instrumentation applications, where good linearity and low power consumption are of utmost importance. It offers unmatched performance, functionality, and cost, compared to other FET arrays.
In summary, the CSD86330Q3D active cell array is an advanced device that combines several types of FETs and arrays into one device. Its wide range of features make it ideal for audio, video and instrumentation applications. The low voltage gate biasing technology and power management technology ensure superior performance and low power consumption. Its low current gate biasing technology allows for high-current capability. The CSD86330Q3D is a cost-effective solution that offers a wide range of features and performance.
The specific data is subject to PDF, and the above content is for reference
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