CSD87355Q5D Allicdata Electronics
Allicdata Part #:

296-44041-2-ND

Manufacturer Part#:

CSD87355Q5D

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET 2N-CH 30V 8LSON
More Detail: Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V ...
DataSheet: CSD87355Q5D datasheetCSD87355Q5D Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: NexFET™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 15V
Power - Max: 12W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (5x6)
Description

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The CSD87355Q5D is a field effect transistor (FET) array. It can be used in analog or digital circuits and it is designed specifically for high linearity applications. It has a quiescent drain current rating of 5A and it can handle up to 60 volts when operating in a P-type configuration. The CSD87355Q5D is also able to operate in both the N-type and P-type configurations, meaning it is suitable for both AC and DC applications.

How Does a FET Array Work?

FET arrays work by controlling the charge carriers that travel through the configurations of the FETs in the array. In general, the FET array allows an applied voltage bias to control the gate-source voltage, which then controls the current flow through the source and drain of the FETs. This ultimately allows for the generation of electrical signals in digital or analog applications. Although FET arrays are best known for their use in amplifying and digital circuits, they can also be used for other purposes such as thermal management, power switching, and voltage level control.

The CSD87355Q5D

The CSD87355Q5D has N-channel MOSFETs integrated in a single package containing two dual N-channel MOSFETs. It is designed to provide four fully independent FET switches with total drain current of up to 5A. It features an integrated sense transistor that allows current sensing measurement. This allows the CSD87355Q5D to measure the current passing through it, enabling the user to control current flow accurately.

The CSD87355Q5D has low on resistance, allowing for a low voltage drop with a high current. This makes it highly suitable for power-saving applications. Its high frequency operation capability also makes it suitable for high-speed switching applications and its low gate charge allows for faster switching. It is also able to minimize harm to the output signals due to its low switching thresholds, low input capacitance, and low input current.

Applications of the CSD87355Q5D

The CSD87355Q5D is suitable for analog and digital applications. It is commonly used in motion control systems, solar and LED lighting systems, switch mode power supplies, and temperature and pressure sensing. Due to its low on-resistance and high frequency operation, it can be used in high-speed switching applications, such as motor control and power transmission. It can also be used for level shifting, voltage regulation, and interface protection. The CSD87355Q5D is also commonly used in automotive applications due to its superior temperature and gate current tolerance.

Conclusion

The CSD87355Q5D is a field effect transistor array designed for use in high linearity applications. It is able to provide four independent FET switches with total drain current of up to 5A. It can be used for a variety of analog and digital applications, such as motion control, switch mode power supplies, voltage regulation, and cellular communication. Thanks to its low on-resistance and high frequency operation, the CSD87355Q5D is also suitable for high-speed switching applications. Ultimately, the CSD87355Q5D is an ideal choice for applications that require low voltage drop with a high current.

The specific data is subject to PDF, and the above content is for reference

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