DMN2028UVT-13

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	TSOT-26
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.2W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	856pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	8.3nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	24 mOhm @ 6.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	6.2A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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DMN2028UVT-13 is a highly robust surface-mount FET device from the well regarded Delta Electronics Incorporated. It is an N-channel enhancement MOSFET which has been designed to give excellent robustness and reliable performance.The DMN2028UVT-13 is designed to be used as a basic power switch and can be used in commercial and industrial applications. This FET has a drain-source voltage rating of 20 Volts, a gate-source voltage rating of +-10 Volts and an operating temperature range of -55°C to +125°C. The pin-out configuration of the DMN2028UVT-13 is standard, with two gates, source and drain. The drain is the load side of the FET, while the source is the power side. The gate is the control side for the FET and is controlled by a voltage input.The DMN2028UVT-13 has a maximum drain current rating of 25 Amps, a maximum on-state resistance (Rds(on)) of 2.2 ohms, and a maximum continuous drain-source voltage of 20V. Its gate-source breakdown voltage (BVgs) is specified at a very low level of -4V, making the FET suitable for low-voltage applications. It also has a maximum Pulsed Drain Current rating of 50 Amps, making it ideal for switching higher loads.The DMN2028UVT-13 is a low-power FET and works best in switching applications where fast switching and low energy consumption are important. It has low gate charge, low output capacitance, and a fast switching speed. This makes it suitable for switching circuits that require high efficiency and minimal power consumption. It is also suitable for use in high-frequency, low-power switching applications such as switching circuits for mobile phones, personal digital assistants, and other consumer electronics.The working principle of the DMN2028UVT-13 is simple. When a positive voltage (Vgs) is applied to the gate, an induced electric field is created between the source and the drain. This electric field easily carries the electron current from the source to the drain at a low resistance, thereby allowing current to flow. When the voltage is removed, the induced electric field is destroyed and the gate-source voltage (Vgs) returns to zero. At this point, the resistance between the source and the drain increases and the electron current stops flowing. This is how the DMN2028UVT-13 works as a switch. The DMN2028UVT-13 is an excellent choice for applications that require robust, reliable, and low-power switching. It is suitable for a wide range of commercial and industrial applications, including consumer electronics, automotive applications, renewable energy systems, computing and networking, and electronic power conversion. In conclusion, the DMN2028UVT-13 is a reliable and robust FET device from Delta Electronics Incorporated. It has a drain-source voltage rating of 20 Volts, a gate-source voltage rating of +-10 Volts and an operating temperature range of -55°C to +125°C. It has a maximum drain current rating of 25 Amps, a maximum on-state resistance of 2.2 ohms, and a maximum continuous drain-source voltage of 20V. It is suitable for a wide range of commercial and industrial applications, including consumer electronics, automotive applications, renewable energy systems, computing and networking, and electronic power conversion.

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