DMN2041UFDB-7 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	4.7A
Rds On (Max) @ Id, Vgs:	40 mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:	713pF @ 10V
Power - Max:	1.4W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	U-DFN2020-6 (Type B)

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Introduction

The DMN2041UFDB-7 is an integrated circuit integrated in an 8-pin package. It is a dual N-Channel MOSFET array, each pair of series-connected MOSFETs forming an individual power switch. It provides better performance than or the same performance features of multi-power switch systems, while saving board space because of its integrated nature. This IC is suitable for smart power switch applications, manual power switch applications, and various other switching applications.

Application Field

The DMN2041UFDB-7 IC is used in a wide range of applications, including: power switch applications, motor control applications, switching applications, and power management applications. The IC can be used to switch high current and high voltage levels, making it suitable for applications such as motor control, light dimming, and power supplies. Its on-resistance is low, making it ideal for low power applications. The IC is also capable of withstanding high EMI levels, making it suitable for portable applications.

Working Principle

The DMN2041UFDB-7 IC is a dual N-Channel MOSFET array, each pair of series-connected MOSFETs forming an individual power switch. The two switches are connected in a back-to-back configuration, with one switch on each side of the IC. The control input of the IC is provided by a logic circuit, which is used to activate the power switch. When the logic circuit is activated, a voltage bias is applied to the gate of the MOSFETs, which induces a current between the source and drain. This current is proportional to the gate voltage bias, with the maximum current limited by the RDS(on) rating of the MOSFETs. The IC also has an integrated diode to protect the MOSFET from high currents during a switch-off operation. When the switch is switched off, the output is isolated from the power source. Additionally, the IC contains an integrated body-diode for protection against reverse polarity.

Conclusion

The DMN2041UFDB-7 IC is an integrated circuit integrated in an 8-pin package. It is a dual N-Channel MOSFET array, each pair of series-connected MOSFETs forming an individual power switch. It provides better performance than or the same performance features of multi-power switch systems, while saving board space because of its integrated nature. The IC can be used in power switch applications, motor control applications, switching applications, and power management applications. The IC is also capable of withstanding high EMI levels, making it suitable for portable applications. It is an ideal solution for a variety of switching applications.

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