DMN2600UFB-7 Allicdata Electronics

DMN2600UFB-7 Discrete Semiconductor Products

Allicdata Part #:

DMN2600UFB-7DITR-ND

Manufacturer Part#:

DMN2600UFB-7

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 25V 1.3A DFN1006-3
More Detail: N-Channel 25V 1.3A (Ta) 540mW (Ta) Surface Mount 3...
DataSheet: DMN2600UFB-7 datasheetDMN2600UFB-7 Datasheet/PDF
Quantity: 1000
1 +: $ 0.05000
10 +: $ 0.04850
100 +: $ 0.04750
1000 +: $ 0.04650
10000 +: $ 0.04500
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 3-UFDFN
Supplier Device Package: 3-DFN1006 (1.0x0.6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 540mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 70.13pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 0.85nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 350 mOhm @ 200mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN2600UFB-7 is a depletion-mode N-channel MOSFET which is designed for low-voltage and high-current applications. It has a voltage rating of 30V and a maximum drain source current of 12A. It is well suited for use in power supply, audio power, motor control, and other high power circuits. It is also suitable for battery chargers, solar panels, smart home systems, LED lighting, and other battery-powered applications. It is typically used in a voltage follower configuration in order to provide a high current output.

Application Field

The DMN2600UFB-7 is an ideal choice when a low-voltage, high-current circuit is needed. It provides a low-voltage drop across the MOSFET and is capable of carrying up to 12A of current. The low-voltage drop allows it to be used in power supply circuits and LED lighting systems, where efficiency is important. It can also be used in audio power circuits and motor control circuits, where the low voltage drop provides improved performance. It is also suitable for battery charger applications, such as those used in solar panels and smart home systems.

Working Principle

The DMN2600UFB-7 is a depletion-mode device, meaning that it does not require an external gate voltage to turn it on. Instead, the gate voltage is self-induced by the drain current, allowing the MOSFET to operate in what is known as the linear region. When a drain-source voltage is applied to the MOSFET, the gate voltage increases, causing an exponential increase in drain current. The drain current is limited by the resistance between the source and the drain, and the threshold voltage of the MOSFET.

TheDMN2600UFB-7 is typically used in a voltage follower configuration, where it is connected to a supply rail and the output is connected to the drain. The drain voltage follows the supply voltage, providing a low-voltage, high-current output. The voltage follower configuration also provides an advantage over other MOSFET configurations, such as the common source configuration, since it is less prone to oscillation and instability due to external noise.

Conclusion

The DMN2600UFB-7 is a high-current depletion-mode MOSFET which is designed for low-voltage applications. It has a voltage rating of 30V and a maximum drain source current of 12A. It is well suited for use in power supply, audio power, motor control, and other high power circuits. It is typically used in a voltage follower configuration in order to provide a high current output.

The specific data is subject to PDF, and the above content is for reference

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