DMN2028UFDF-13

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The DMN2028UFDF-13 transistor is a type of field effect transistor (FET) known as a MOSFET (metal-oxide-semiconductor FET). It has a single FET cell. A FET is a type of transistor (transistor or field effect transistor) that has a channel formed by the junction of two metal-oxide semiconductor layers (MOS). As current flows through the channel, a voltage drop is created between the two layers. The DMN2028UFDF-13 is a specific type of MOSFET that is designed for use in digital logic circuits and general purpose applications. The DMN2028UFDF-13 device is a N-channel enhancement mode MOS field effect transistor. It is designed for digital logic power switches, analog power switches, and low leakage linear applications. The DMN2028UFDF-13 has a drain-source breakdown voltage (BVDSS) of 20 V and can handle a maximum continuous drain current (ID) of 28 A. It is also designed for a drain-source on-state resistance (RDS(on)) of ≤ 2.6 mΩ. It has a maximum gate-source voltage (VGS) of ± 20 V. The DMN2028UFDF-13 is a specific type of FET that is designed to be used in a variety of applications. It can be used as a switch in logic circuits, to amplify signals in audio circuitry and voltage regulation circuits, and as a variable resistor in a wide range of power switching applications. The gate voltage (VGS) of the DMN2028UFDF-13 is adjustable, allowing the device to be used in various voltage regulation and switching circuits.The working principle of the DMN2028UFDF-13 transistor is based on the phenomenon of MOS capacitance. This occurs when a voltage is applied between the drain and source terminals of the transistor. When the voltage is applied, a small electric field is generated at the interface of the two metal-oxide semiconductor layers. This electric field creates an electric charge at the interface, which then forms a small capacitance between the two layers. The magnitude of this capacitance is determined by the voltage applied to the gate terminal, allowing the current flow through the transistor to be controlled. The DMN2028UFDF-13 is a versatile device and can be used in a wide range of applications, including digital logic circuits, audio and voltage regulation circuits, and low power switching. Its adjustable gate voltage and low drain-source on-state resistance make it a suitable device for numerous applications, such as logic level power switch applications and general purpose linear applications. In conclusion, the DMN2028UFDF-13 is a single MOSFET designed for various digital logic and analog signal applications. The voltage across the gate and drain determines the capacitance between the two layers and thus the current flow through the transistor. This transistor is an ideal choice for a variety of applications, including power switching, voltage regulation, and low power switching.

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