Allicdata Part #: | DMN2400UFDQ-7DI-ND |
Manufacturer Part#: |
DMN2400UFDQ-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 0.9A DFN1212-3 |
More Detail: | N-Channel 20V 900mA (Ta) 400mW (Ta) Surface Mount ... |
DataSheet: | DMN2400UFDQ-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 3-UDFN |
Supplier Device Package: | U-DFN1212-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 37pF @ 16V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 0.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 200mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 900mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMN2400UFDQ-7 is a type of N-channel MOSFET used in power control circuits. It operates at a high working voltage and has a low rate of drain-source on-resistance. The device is designed for applications that require high speed, efficient switching and power dissipation.
The DMN2400UFDQ-7 is well suited for various power control applications, such as motor control, motor driving, inverters, and more. It is ideal for use in applications that require high speed, low voltage control, and high current switching. The device has a low on-resistance of 0.02 Ohm, allowing for efficient power dissipation.
At the core of the device is a metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET is a specialized type of field-effect transistor that consists of two insulated gates. The gates are insulated using a metal oxide layer, and the voltage that is applied to the gates determines the current that flows through the transistor. In the case of the DMN2400UFDQ-7, when the gate voltage increases, the drain current increases, and when the gate voltage decreases, the drain current decreases.
The DMN2400UFDQ-7 has an ultra-thin layer of silicon nitride between the gate insulation and the drain, allowing for a high switching speed. The drain source voltage range is from -20 V to +20 V, and the maximum drain current is 70 A. The working temperature range is from -55°C to +150°C, with a maximum junction temperature of 175 °C.
With its high switching speed and low on-resistance, the DMN2400UFDQ-7 is a great choice for applications such as motor control, motor driving, and inverters. The device is designed for use in high-voltage, high-current applications, and is capable of switching up to 70 A of current. The device is also well suited for applications that require an ultra-thin layer of silicon nitride, as it is capable of switching at speeds up to 30 kHz.
In addition to its versatility, the DMN2400UFDQ-7 is also cost effective. The device offers a variety of features at a competitive price, making it a great choice for many applications.
The DMN2400UFDQ-7 is an ideal choice for any high voltage, high current switching application. Its low on-resistance, high working voltage, and high switching speed make it an excellent choice for a variety of applications. The device is also cost effective, offering a variety of features at a competitive price.
The specific data is subject to PDF, and the above content is for reference
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