DMN2230UQ-13

The DMN2230UQ-13 is a single-MOSFET created with advanced technology to serve many applications. This type of MOSFET is composed with the DMN3223QTL13 and the DMN3223QL13. The main purpose of this single-MOSFET is to deliver powerful performance and excellent reliability in high voltage applications.

The DMN2230UQ-13 has a wide range of applications in automotive, aerospace, appliance, medical, industrial, and other applications. The DMN2230UQ-13 is suitable for temperature sensitive circuits because it has a low temperature coefficient, high frequency performance, and excellent thermal performance. Additionally, the DMN2230UQ-13 is used in switching and linear applications, such as power controllers, motor drives, valve drives, and AC-DC converters.

The DMN2230UQ-13 works on the principle of MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors). MOSFETs are three-terminal semiconductor devices that control the voltage and current of a circuit. MOSFETs work by controlling the amount of current that flows between the source and the drain. When a positive voltage (Vdd) is applied to the gate, current starts to flow from the source to the drain. As the voltage applied to the gate increases, the amount of current flowing from the source to the drain also increases.

The DMN2230UQ-13 has an ultra-low on-state resistance of 500 mΩ at 150°C which makes it ideal for high current applications, such as motor control and automotive engine control. It also has a low gate-source capacitance of 2.5pF at 10V, which reduces the gate drive requirements and ensures fast switching speeds. Additionally, the DMN2230UQ-13 has a drain-source breakdown voltage of 800V and a high temperature capability of 150°C. The DMN2230UQ-13 is available in lead-free packages that are compliant with the RoHS standards.

In conclusion, the DMN2230UQ-13 is an advanced single-MOSFET that is ideal for many applications, due to its low temperature coefficient, high frequency performance, and excellent thermal performance. It is capable of delivering powerful performance and excellent reliability in high voltage applications. Additionally, it has ultra-low on-state resistance and a low gate-source capacitance, which are crucial for efficient operation in switching and linear applications.