DMN2015UFDF-7

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The DMN2015UFDF-7 is an ultra fast power MOSFET for use in high speed switching applications. It has been designed for operation up to 175V, and is available in 4 lead flat-pak and surface mount packages. It features an extremely low gate charge and a maximum drain-source on-resistance of only 5 mOhms. This makes it well suited for applications where high speed switching, low on-resistance, and low gate charge are desired.

Design Characteristics

The DMN2015UFDF-7 is a single N-channel enhancement MOSFET, with a low gate charge and low on-resistance. The device is built on a double-diffused D-mode structure, with a voltage rating of 175V. This makes it suitable for a wide range of applications, from medium to high power switching. The device is available in 4 lead flat-pak and surface mount packages. This makes it suitable for a wide range of applications, from desktop computers to server-grade embedded systems.

On-resistance Characteristics

The DMN2015UFDF-7 has a maximum drain-source on-resistance of only 5 mOhms. This low on-resistance allows for low power loss in high-speed switching applications. The device also has a low gate charge, which helps to reduce switching losses. This combination makes the device well suited for applications that require fast switching and low on-resistance.

Applications

The DMN2015UFDF-7 is well suited for high speed switching applications. It is suitable for use in desktop computers, servers, and embedded systems. It can also be used in a wide range of power control applications, such as motor control and power regulation. In addition, the device\'s low on-resistance and low gate charge make it suitable for use in high current applications, such as welding.

Working Principle

The DMN2015UFDF-7 is an enhancement mode MOSFET, which means that it must be turned “on” in order to conduct current. This is accomplished by applying a positive voltage to the gate of the device, which then attracts electrons from the source to the drain. The device will remain “on” until the gate voltage is reduced to a level at which it no longer attracts electrons from the source. This reduces the current flow between the source and the drain and the device is then turned “off”. This type of MOSFET has the advantage of being able to be switched off quickly and is therefore well suited for high speed switching applications.

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