DMN2170U-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMN2170UDITR-ND |
Manufacturer Part#: |
DMN2170U-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 2.3A SOT23-3 |
More Detail: | N-Channel 20V 2.3A (Ta) 600mW (Ta) Surface Mount S... |
DataSheet: | DMN2170U-7 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 600mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 217pF @ 10V |
Vgs (Max): | ±12V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.3A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The DMN2170U-7 is a type of transistor commonly used in modern electronics. It is a single n-channel MOSFET with a maximum drain-source voltage of 20V and a continuous drain current of 2 A.
The DMN2170U-7 is used in a variety of applications, including power supplies, motor control, motor drivers, automotive electronics, switching regulators, and other applications that require high switching speeds with large current handling capabilities. It is also used in high-power, high-voltage switching applications where relatively small size and weight are important.
The DMN2170U-7 has an attractive maximum on-state resistance of 6.4Ω and a maximum threshold voltage of 4.3 V. Its low on-state resistance allows it to switch quickly and efficiently, allowing for higher switching speeds than other MOSFETs. In addition, it offers excellent thermal resistance and is available in a small package size. As a result, it is ideal for applications where size and weight are a concern.
The working principle of the DMN2170U-7 is based on the ability of a MOSFET to control the flow of current between the drain and the source. The MOSFET works by having a gate electrode that can be controlled, allowing the current through the device to increase or decrease. By applying a control signal to the gate, the device can be switched on or off. The gate voltage controls the drain-source voltage, which in turn controls the current through the device.
The DMN2170U-7 offers a wide range of benefits, including high switching speeds and high current handling capability. It also offers excellent thermal resistance and thermal performance. The device is also highly reliable, making it an ideal choice for applications that require precision and repeatability. Finally, its small size and low weight make it ideal for applications where size and weight are a concern.
The specific data is subject to PDF, and the above content is for reference
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