DMN2075UDW-7 Discrete Semiconductor Products

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DMN2075UDW-7 is a Dual N-Channel enhancement mode MOSFET (Metal Oxide Semiconductor Field-effect Transistor) designed for use in a variety of high power switching applications. In particular, this device is suitable for high speed switching applications where it offers high efficiency and low voltage operation. The design of the MOSFET makes it suitable for high voltage applications, and the device is also suitable for use in DC/DC or AC/DC power supplies. It is also suitable for use in motor and lighting control systems, as well as other applications where a low on-resistance is required.

The DMN2075UDW-7 device is rated for a maximum VDS voltage of 20V, a maximum drain current of 48A, a maximum power dissipation of 247W, and a maximum junction temperature of 175°C. It is available in a TO-220 package.

This device is a Dual N-Channel MOSFET, which means that it features two separate N-Channel transistors, each with its own gate and drain terminals. The device has two body diodes, one for each of the transistors, providing protection against ESD events. The maximum on-resistance of this device is very low, making it suitable for high speed switching applications. The on-resistance is typically 0.45 Ohms at 10V VGS, and it is capable of switching frequencies up to 20MHz. Additionally, the device has low operating temperature, with an Operating Temperature Range (Tj) of -55°C to 175°C.

The working principle of the DMN2075UDW-7 is to allow current to flow between the drain and the source terminals, when a voltage is applied to the gate terminal. The device behaves like a switch and can be used to switch a circuit on or off. It is capable of operating at very high frequencies, making it suitable for high speed switching applications. The device also has an inherent body diode, which helps to protect against ESD events.

The DMN2075UDW-7 device is suitable for a range of high power switching applications, such as in DC/DC or AC/DC power supplies, motor and lighting control systems, and other applications where a low on-resistance is required. It is also suitable for high voltage applications due to its low on-resistance and high switching speeds. The device is rated for a maximum VDS voltage of 20V, a maximum drain current of 48A, a maximum power dissipation of 247W, and a maximum junction temperature of 175°C.

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