DMN2004K-7 Allicdata Electronics

DMN2004K-7 Discrete Semiconductor Products

Allicdata Part #:

DMN2004KDITR-ND

Manufacturer Part#:

DMN2004K-7

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 20V 0.63A SOT23-3
More Detail: N-Channel 20V 630mA (Ta) 350mW (Ta) Surface Mount ...
DataSheet: DMN2004K-7 datasheetDMN2004K-7 Datasheet/PDF
Quantity: 198000
1 +: $ 0.04000
10 +: $ 0.03880
100 +: $ 0.03800
1000 +: $ 0.03720
10000 +: $ 0.03600
Stock 198000Can Ship Immediately
$ 0.04
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Vgs (Max): ±8V
Series: --
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN2004K-7 is an N-channel enhancement mode Field-Effect Transistor (FET) with a maximum drain-source voltage rating of 60 Volts. It has a drain current capacity of up to 7 Amps, making it well-suited for a wide range of applications.

In terms of its working principle, DMN2004K-7 is a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). This type of transistor makes use of metal-oxide as an insulating layer between the Gate and the substrate body, which helps control the flow of electrons between the drain and the source. This is done by applying a voltage to the Gate terminal, which in turn controls the current passing through the device and from the source to the drain.

DMN2004K-7 MOSFETs are highly versatile, and can be used in a variety of applications. This includes data acquisition circuitry, power amplification, motor control and driver circuits, amplifier biasing, switching applications, and other related use cases. DMN2004K-7 also offers a low leakage current, making it suitable for use in audio, video, and other precision applications.

DMN2004K-7 is ideal for switching applications as it provides a low on-state resistance (RDS(on)), allowing the device to switch quickly with minimal power dissipation. Additionally, DMN2004K-7 is designed to be capable of operating in either an enhancement or depletion mode, depending on the level of voltage applied to the Gate terminal. This helps increase the versatility of the device, allowing it to be used in a wide range of applications.

In terms of power handling capability, DMN2004K-7 offers a continuous drain current of up to 7 Amps, making it suitable for use in higher power applications. Additionally, DMN2004K-7 can handle a maximum drain-source voltage of 60 Volts, making it ideal for use in higher voltage applications.

Overall, the DMN2004K-7 is an excellent choice for a wide range of applications, offering a high level of performance and reliability. With its wide operating range and its high power handling capabilities, it is an ideal choice for a variety of industrial, commercial, and hobbyist applications.

The specific data is subject to PDF, and the above content is for reference

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