Allicdata Part #: | DMN2028UFDF-7DITR-ND |
Manufacturer Part#: |
DMN2028UFDF-7 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 7.9A U-DFN2020-6 |
More Detail: | N-Channel 20V 7.9A (Ta) 660mW (Ta) Surface Mount U... |
DataSheet: | DMN2028UFDF-7 Datasheet/PDF |
Quantity: | 9000 |
3000 +: | $ 0.09563 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | U-DFN2020-6 (Type F) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 660mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 907pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 8V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 7.9A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMN2028UFDF-7 is a MOSFET (Metal-oxide-semiconductor Field-effect Transistor) that belongs to the broad category of single FETs (Field-effect Transistors). It is widely used in power management, lighting, and motor control applications, particularly in industrial, automotive, and consumer electronics.
MOSFETs are semiconductor devices that allow electric signals to be controlled by applying a small electrical charge from a control gate, rather than a large current. They are typically used in circuits that require high switching speeds and efficiency, such as computer power supplies, voltage regulators, and motor controllers. The DMN2028UFDF-7 is one such MOSFET.
At its core, the DMN2028UFDF-7 is a single-channel enhancement enhancement MOSFET. The device has a drain-source on resistance of 0.026 ohms and a gate-source voltage (VGS) of 20V. It has a package size of PowerPAK® SO-8 and is suitable for applications up to 30V. The transient thermal impedance is 4.2°C/W.
In its typical application field, the DMN2028UFDF-7 is used as a power switch in high-efficiency power management designs. It has features such as low on-resistance and fast switching times that make it suitable for power conversion and motor control applications, particularly those applications which require high temperature operation (up to 175°C operating temperature range).
The working principle of a MOSFET is deceptively simple. It consists of a metal-oxide semiconductor channel, with a control gate electrode on top of it. When a small electrical charge is applied to the control gate from a power source, it creates a potential difference across the oxide-semiconductor channel. This potential difference modifies the conductivity of the channel, allowing electrons to pass through it more easily. As a result, the MOSFET is able to control high current with a relatively low voltage input.
In the case of the DMN2028UFDF-7, the control gate is able to conduct up to +20V, allowing for efficient switching and a low on-resistance. This makes it well-suited for a wide range of digital and power circuit applications, from computer power supplies to digital amplifiers.
In summary, the DMN2028UFDF-7 is an efficient and reliable single-channel enhancement MOSFET. It has a wide range of applications, from computer power supplies to motor controllers, and is well-suited for high temperature applications due to its low on-resistance and high heat dissipation. Its working principle is based on the application of a small electrical charge to its control gate electrode, allowing for efficient and rapid current control.
The specific data is subject to PDF, and the above content is for reference
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