Allicdata Part #: | DMN2400UFDQ-13DI-ND |
Manufacturer Part#: |
DMN2400UFDQ-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 0.9A DFN1212-3 |
More Detail: | N-Channel 20V 900mA (Ta) 400mW (Ta) Surface Mount ... |
DataSheet: | DMN2400UFDQ-13 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 3-UDFN |
Supplier Device Package: | U-DFN1212-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 37pF @ 16V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 0.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 200mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 900mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN2400UFDQ-13 is a type of single MOSFET that is used in a range of applications. It has a voltage rating of 24V and a drain current up to 8A. The DMN2400UFDQ-13 is primarily used as a general-purpose switch in the automotive electronics, industrial, and communication industries, as well as other applications. This article will explore the various applications and working principle behind the DMN2400UFDQ-13.
Applications
The DMN2400UFDQ-13 MOSFET is used as a switch in a variety of applications, from automotive electronics to communications. It is commonly used in automotive power supplies and as an internal switch for voltage regulators, operation amplifiers, and so forth. In industrial applications, the DMN2400UFDQ-13 can be used as a switch in motor control systems and other industrial electronic devices. In addition, the device can be used in communication products including cellular phones and wireless LAN devices.
Working Principle
MOSFETs, like the DMN2400UFDQ-13, work by changing the conduction of a channel that lies between the source and the drain. The MOSFET is made up of a gate that is connected to the drain by an insulated layer surrounding the gate. When a voltage is applied to the gate, it creates an electric field at the surface of the insulated layer, which causes a channel to be created from the source to the drain. This channel allows electrons to flow from the source to the drain and the MOSFET is said to be "on". When the voltage is reduced or discontinued, the electric field is reduced, and the channel between the source and drain is reduced, and the MOSFET is "off".
Design Considerations
When using the DMN2400UFDQ-13, there are several design considerations to keep in mind. One important consideration is the gate-source threshold voltage. This is the voltage at which the MOSFET will be switched on, and must be kept within the specifications of the device. The drain-source breakdown voltage must also be considered, as this determines the maximum voltage at which the device will be able to operate. Finally, the MOSFET’s output capacitance should be considered in order to minimize its impact on the circuit’s overall frequency response.
Conclusion
The DMN2400UFDQ-13 MOSFET is a popular transistor that is used in a variety of applications. It is primarily used for general-purpose switching in the automotive, industrial, and communication industries. It works by changing the conduction of a channel between the source and the drain, and several design considerations should be kept in mind when using the device. With its low power consumption, high current carrying capability, and wide operating temperature range, the DMN2400UFDQ-13 is a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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