
DMN32D4SDW-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMN32D4SDW-7DITR-ND |
Manufacturer Part#: |
DMN32D4SDW-7 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 30V 0.65A SOT363 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 650mA 290mW Su... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.05796 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 650mA |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 250mA, 10V |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 15V |
Power - Max: | 290mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
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DMN32D4SDW-7 product is an array FET (Field Effect Transistors) from Chipower electronic. This N-Channel MOSFET (NMOS) is typically used in high voltage power management application for accommodating motor driving, controlling switching power, as well as charger and adapter applications.
The DMN32D4SDW-7 is an array of 4 N-Channel depletion type MOSFETs in one package. It is housed in IPx-8 (DIP-8) package, that provides wide flexibility for the designer. This product has SOP-8 package and offer industry standard footprints, making it useful in a wide variety of consumer and automotive electronics system.
The DMN32D4SDW-7 has several distinct parameters that make it a superior performer in very demanding and high density applications. The threshold voltage (Vth), typical of this product is -3.5V to -4.0V and the gate capacitance (Ciss) is 43nF, making it desirable for high frequency switching applications up to 650 kHz. The “maximal” gate charge (Qg) is rated at 40µC, providing an excellent benefits in low inserted loss design. The on-state resistance (Rdson) is rated at 13.3Ω making it ideal for high current capacity designs up to 50 A.
The DMN32D4SDW-7 also features a temperature range from -55°C to +175°C. It has a blocking voltage from 30 V to 55 V, depending on part selection, making the DMN32D4SDW-7 compatible with a variety of applications.
The DMN32D4SDW-7 working principle lies in the embodiment of its structure as an array FET. It opens and closes a circuit just like any other FET which is due to the attraction to the gate voltage which varies between being attractive to attractive, between positive and negative supply voltage sources.
What makes the DMN32D4SDW-7 stand out is its integrated structure of four switches, with independent control from different gate voltages. It also has an ability to scale the gate sensitivity, making it suitable for motor driving application where precise steady control is crucial. As for its high performance switching characteristics and endurance, the DMN32D4SDW-7 offers high levels of confidence that it will meet all rigorous requirements.
The DMN32D4SDW-7 is designed to provide design engineers with a reliable, cost effective and solution to a wide range of needs, from high voltage and high power conditions to small form factor solutions. It also has excellent dynamic switching performance,that is superbly suited to various power conversion types.
In summary, the DMN32D4SDW-7 is an array FET (Field Effect Transistors) used in high voltage power management application that have wide temperature range, blocking voltage, gate capacitances and low on-state resistance. It could offer precise control in motor driving application and provides high levels of confidence for its excellent switching performance.
The specific data is subject to PDF, and the above content is for reference
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