DMN3009SFG-7

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The DMN3009SFG-7 MOSFET is a 3 Amp N-Channel enhancement mode MOSFET with a threshold voltage of 4.0V. The device has a high input impedance, fast switching speed and small surface-mounted packages making it suitable for a wide range of applications.

The DMN3009SFG-7 MOSFET has a high current carrying capacity due to its internal construction which includes two vertical N-channel MOSFETs connected in series. This series construction provides the DMN3009SFG-7 with a very low on-resistance of only 0.18 Ohm, enabling it to handle up to 3 Amps of continuous current.

The gate is separated from the source and drain terminals, allowing the gate to be controlled without directly affecting the source and drain. This makes the DMN3009SFG-7 MOSFET an ideal device for controlling larger currents without the need for additional circuitry. The high input impedance of the device allows it to be driven using a standard TTL or CMOS logic level.

The DMN3009SFG-7 MOSFET is ideal for switching applications such as motor control, power management, level shifting, and load switching. The small surface mounted packages make it suitable for high density applications where board space is at a premium. The device is particularly suitable for automotive applications due to its increased resistance to temperature and vibration.

The DMN3009SFG-7 MOSFET uses the MOSFET\'s gate voltage as its primary means of controlling the device. The gate voltage is applied between the source and the gate, creating an electric field between the gate and the source and drain. This electric field causes a corresponding change in the channel resistance, allowing current to flow through the channel. By varying the gate voltage, the flow of the current through the channel can be controlled in a very predictable manner.

The DMN3009SFG-7 MOSFET features very low turn-on and turn-off times, making it an ideal choice for high speed switching applications. The device also features very low power losses and has a high level of immunity to temperature, vibration and electrical noise, making it an excellent choice for high reliability applications.

In summary, the DMN3009SFG-7 MOSFET is a 3 Amp N-Channel enhancement mode device with a very low on-resistance of 0.18 Ohm, ideal for powering larger loads with great reliability, fast switching times and low power losses. Its small size and excellent electrical characteristics make it an ideal choice for a wide range of applications from motor control to level shifting and load switching.

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