DMN3067LW-13

Vgs(th) (Max) @ Id:	1.5V @ 250µA
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	447pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	4.6nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	67 mOhm @ 2.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2.6A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The DMN3067LW-13 transistor from Vishay is part of the family of N-Channel MOSFETs. It is a single-gate device and provides significant improvements over the older P-Channel MOSFETs in terms of power-handling capability, low on-resistance, and ability to handle high-speed switching.

Application Field

DMN3067LW-13 MOSFETs are suitable for various kinds of applications such as digital power supply, DC/DC converter, power management and motor control. They can also be used to build high-power electro-mechanical systems and high-speed switching circuits.The DMN3067LW-13 is great for applications that require low on-resistance and high performance at the same time. They are designed to provide the best power management and switching loss. This makes them ideal for applications such as portable and mobile communications systems, digital audio amplifiers and automotive applications.

Features

The DMN3067LW-13 has several impressive features that make it ideal for various applications. For one, it has a maximum current rating of 42A. This is an impressive figure considering that some of its closest competitors have only 6A ratings. The junction-to-ambient thermal resistance of the DMN3067LW-13 is also fairly low at 0.28 °C/W. This indicates excellent thermal performance and ensures stable operation even under high-temperature conditions. The MOSFET also has good capacitance characteristics, which makes it suitable for high-speed switching applications.

Working Principle

The DMN3067LW-13 works on the principle of a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a three-terminal device with a source, a drain, and a gate. The gate is the control electrode, and when it is triggered, current can flow from the source to the drain. The DMN3067LW-13 also has a built-in antiparallel diode which helps reduce voltage spiking in situations where power is rapidly switched on and off.The DMN3067LW-13 is designed to provide excellent switching characteristics, which is especially important for high-speed applications. It has a fast turn-off times and low gate charge, making it suitable for high-speed switching in power management and motor control systems.

Conclusion

The DMN3067LW-13 is an impressive single-gate N-Channel MOSFET from Vishay. It has a maximum current rating of 42A and a low on-resistance, making it suitable for high-power applications. It also has excellent switching and thermal characteristics, making it suitable for high-speed switching applications and electro-mechanical systems.

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