DMN3024LSS-13 Allicdata Electronics
Allicdata Part #:

1034-DMN3024LSS-13DITR-ND

Manufacturer Part#:

DMN3024LSS-13

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 30V 6.4A 8SO
More Detail: N-Channel 30V 6.4A (Ta) 1.6W (Ta) Surface Mount 8-...
DataSheet: DMN3024LSS-13 datasheetDMN3024LSS-13 Datasheet/PDF
Quantity: 2500
1 +: $ 0.18000
10 +: $ 0.17460
100 +: $ 0.17100
1000 +: $ 0.16740
10000 +: $ 0.16200
Stock 2500Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMN3024LSS-13 is one of the most popular and enduring field effect transistors (FETs). It is a single MOSFET that is commonly used in power circuits, signal conditioning and low-side switching. In this article, we’ll explore the application field and working principle of the DMN3024LSS-13.

The DMN3024LSS-13 is a J-FET (Junction Field-Effect Transistor) based on a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). The device has a maximum drain-source voltage of up to 100V and a maximum drain current of up to 16A. It is designed to operate at a temperature range of -55 to +175 degrees Celsius.

One common application of the DMN3024LSS-13 is low-side switching.Low-side switching involves controlling the power supply of the load which can be used to turn on or off the power to a device. The DMN3024LSS-13 provides the better efficiency and thermal gains compared to other FET types. The low on-resistance and low gate charge of this FET means the gate turn-off and fusing time is minimized.

In addition to low-side switching, the DMN3024LSS-13 can also be used in power circuits as an overload protection mechanism. The FET is ideal for this application as its drain-source voltage can handle up to 100V and its fast response time makes it well-suited for these types of applications.

The DMN3024LSS-13 also excels when used in signal conditioning applications.The FET is capable of correctly regulating current, voltage and other signals with fast response times. This makes the device ideal for use in high-speed circuits, as the faster switching speed reduces unnecessary power consumption.

The working principle of the DMN3024LSS-13 is based on a simple physics concept called drainage. It is the flow of electrons in one direction between the source and the drain of the MOSFET. The working of the FET is based on the magnitude of the voltage applied at the gate. By varying the gate voltage, one can control the current flow between the source and the drain.

When a positive voltage is applied to the gate, the channel between the source and the drain is opened and current starts to flow.When the gate voltage is reduced, the channel is closed and current stops flowing. This is known as the ‘turn-off’ characteristic of the DMN3024LSS-13.On the other hand, when the gate voltage is increased, current starts flowing again from the source to the drain. This is known as the ‘turn-on’ characteristic of the FET.

The DMN3024LSS-13 has a number of features that make it a valuable component in many applications. These include a high current rating, low on-resistance, fast switching speed and excellent thermal gain. These elements together make the DMN3024LSS-13 a top choice for designing reliable and efficient power circuits and signal conditioning systems.

The specific data is subject to PDF, and the above content is for reference

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