
Allicdata Part #: | DMN30H14DLY-13DITR-ND |
Manufacturer Part#: |
DMN30H14DLY-13 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 300V .21A SOT-89 |
More Detail: | N-Channel 300V 210mA (Ta) 900mW (Ta) Surface Mount... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.22000 |
10 +: | $ 0.21340 |
100 +: | $ 0.20900 |
1000 +: | $ 0.20460 |
10000 +: | $ 0.19800 |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 10V |
Base Part Number: | DMN30H14 |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 900mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 96pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Rds On (Max) @ Id, Vgs: | 14 Ohm @ 300mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 210mA (Ta) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMN30H14DLY-13 is a type of MOSFET, or a Metal Oxide Semiconductor Field Effect Transistor. Also known as a voltage-controlled field-effect transistor, MOSFETs are one of the most versatile transistors available on the market today. In particular, the DMN30H14DLY-13 is a single transistor, meaning that it only comprises one active gate. In the MOSFET field, the DMN30H14DLY-13 is one of the most popular and widely used transistors, thanks to its versatile range of applications and its well-understood working principle.
DMN30H14DLY-13 transistors are typically used in power control applications. It features a drain-source voltage of 900V, a 0.2V maximum threshold voltage, a continuous drain current of 30A, and a maximum power dissipation of 234W. They are a particularly popular choice for high-current stead-state situations, thanks to their relatively low drain-source voltage. The bias characteristics of the DMN30H14DLY-13 are stable and predictable, making them especially well-suited to circuitry that requires a precisely controlled current flow.
The DMN30H14DLY-13 transistor operates on the principle of conversion of gate voltage to drain current. When a gate voltage is applied, current begins to flow through the transistor’s channel. Current-voltage relationships are linear, with a fixed voltage-to-current ratio. Thus, the amount of current that is allowed to pass through the transistor is determined by the gate voltage applied. This property of the transistor to convert the gate voltage applied to the drain current is known as transconductance. The more gate voltage that is applied, the greater the amount of drain current that is allowed to flow.
The DMN30H14DLY-13 transistors are also known for their resistance to destruction by static electricity. In addition, the DMN30H14DLY-13’s gate-source capacitance is relatively low, so switching times are relatively fast, making the transistor well-suited to high-frequency applications. Finally, the DMN30H14DLY-13 transistors are able to dissipate large amounts of power, making them well-suited to applications that require extremely high levels of current and voltage.
Overall, the DMN30H14DLY-13 transistors are an excellent choice for applications that require a high level of current control or power dissipation. The wide range of applications for these transistors, as well as their relatively well-understood working principle, make them one of the most popular and widely used MOSFET transistors on the market today.
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