FDMA1023PZ Discrete Semiconductor Products |
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Allicdata Part #: | FDMA1023PZTR-ND |
Manufacturer Part#: |
FDMA1023PZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 3.7A MICROFET |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 3.7A 700mW Sur... |
DataSheet: | FDMA1023PZ Datasheet/PDF |
Quantity: | 9000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A |
Rds On (Max) @ Id, Vgs: | 72 mOhm @ 3.7A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 655pF @ 10V |
Power - Max: | 700mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-VDFN Exposed Pad |
Supplier Device Package: | 6-MicroFET (2x2) |
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The FDMA1023PZ is a Discrete Dual N-Channel Enhancement Mode Power MOSFET Array. It consists of two separate N-Channel enhancement mode Power MOSFETs that are designed to operate from a single power supply over a wide range of load conditions. This design maintains the performance levels of the individual components, while providing inherent benefits from an array configuration.
The FDMA1023PZ is suitable for a variety of applications where high speed switching, low-power actuation, and/or high voltage control is required. Common applications of the FDMA1023PZ include motor control and rotary relays, as well as switching power supplies and audio amplifiers. In addition, the FDMA1023PZ is often used in applications that require high-switching speed, low on-state resistance, and low-voltage threshold.
The working principle of the FDMA1023PZ is based on the properties of an array of transconductance-controlled enhancement-mode power MOSFETs. The FDMA1023PZ has two separate circuits, each containing its own N-channel MOSFET. Each circuit is designed to operate from a single power supply and can be connected in either series or parallel, depending on the application. The N-channel devices provide control by operating at low voltage levels, reducing power consumption and improving switching times. The device\'s voltage controlled input enables both on/off delay time and switching threshold voltage to be adjusted for different loads.
The FDMA1023PZ is designed to provide enhanced performance due to its low on-state resistance (RDS(on)). This parameter reduces power losses associated with load current and enables high speed switching during load transient conditions. In addition, the FDMA1023PZ is designed to provide superior gate-source voltage (VGS) characteristi ons. This includes low static gate charge, low gate threshold voltage and improved overdrive capabilities.
The FDMA1023PZ is also designed for use in configurations with mixed-voltage and multiple-power supply schemes. As such, the device has a wide variety of operating voltage ranges and can be adapted to many different applications. It is also designed to provide protection against joule heating and electrostatic discharge, which helps to improve system reliability. These features provide an added level of safety, in addition to the robustness of the device.
In summary, the FDMA1023PZ is a dual N-channel enhancement mode power MOSFET array. It is capable of operating from a single power supply and provides high switching speed, low power consumption and improved voltage characteristi ons. It can also be used in mixed-voltage and multiple-power supply schemes, as well as in configurations that require protection against joule heating and electrostatic discharge. This makes it suitable for applications such as motor control, rotary relays and audio amplifiers.
The specific data is subject to PDF, and the above content is for reference
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