Allicdata Part #: | FDMA905P_F130-ND |
Manufacturer Part#: |
FDMA905P_F130 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH |
More Detail: | P-Channel 12V 10A (Ta) 2.4W (Ta) Surface Mount 6-M... |
DataSheet: | FDMA905P_F130 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 6-VDFN Exposed Pad |
Supplier Device Package: | 6-MicroFET (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3405pF @ 6V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 6V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 10A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDMA905P_F130 is a dual P-Channel metal-oxide-semiconductor field-effect transistor (MOSFET) device. It is used as a power switch to control the flow of current in electronic circuits. The device is suitable for high speed applications such as switching voltage regulators or for general industrial control applications.
The FDMA905P_F130 application field covers automotive, industrial, and consumer electronics applications. It is suitable for use in high power and high voltage applications, such as DC/DC converters. This is because it has a low gate charge and low gate resistance, which is beneficial in reducing power dissipation. Additionally, the device is suitable for low gate drive applications due to its fast switching time. These features help make the FDMA905P_F13 capable of supplying up to 30 Amperes of continuous current in temperatures ranging from -55°C to 125°C.
The FDMA905P_F130 working principle is the same as most MOSFETs. It consists of two terminals, the source and the drain. The gate terminal is used to control the current flow by applying a voltage to it. The voltage that is applied to the gate terminal will either open or close the channel between the source and drain. This channel is a conductive path for current to flow through. When a positive voltage is applied to the gate terminal, it will create an inversion layer between the source and drain that will allow current to flow. When a negative voltage is applied to the gate terminal, the inversion layer will be removed and the current flow will be stopped.
The FDMA905P_F130 offers a high level of performance in multiple applications. Its low gate charge and low gate resistance provide lower power dissipation than similar MOSFETs. Its fast switching time makes it suitable for low gate drive applications. Additionally, its wide temperature range helps make it suited for automotive and industrial applications.
In summary, the FDMA905P_F130 is a dual P-Channel metal-oxide-semiconductor field-effect transistor (MOSFET) device. It is used as a power switch to control the flow of current in electronic circuits. It is suitable for use in high power and high voltage applications, such as DC/DC converters. It has a low gate charge and low gate resistance which help reduce power dissipation. It also has a fast switching time, making it suitable for low gate drive applications. Finally, its wide temperature range makes it well suited for automotive, industrial, and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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