FDMA410NZ

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	6-VDFN Exposed Pad
Supplier Device Package:	6-MicroFET (2x2)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.4W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1080pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 4.5V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	23 mOhm @ 9.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	9.5A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDMA410NZ Application Field and Working Principle
The FDMA410NZ is a non-inverting enhancement-mode Field Effect Transistor (FET) MOSFET and is part of the FDMA400NZ series from Fairchild Semiconductor. This series is general purpose, low-gate charge type of FETs with positive and very low gate threshold voltage. It features an N-Channel type of transistor with a large and symmetrical layout that offers low ON-resistance, which is further supplemented by low capacitance from gate to source, making it ideal for high-frequency applications. The FDMA410NZ has several key features, such as a Drain-Source Voltage at 30 Volts, a Gate to Source Voltage at± 20 Volts and drain current up to 40A. It also has a ±120 micron gate oxide feature that makes it useful at the high frequencies of up to 200 MHz. The Vds is rated at -30V, while the Ids of 40A and rise time of 1ns are feats that are attained by Fairchild’s advanced design process. The FDMA410NZ is designed to have a fast switching action, making it suitable for supplying high currents with short pulses of periods between 1 to 10 nanoseconds. It is also an excellent choice for high frequency, high current, low noise applications. Its low gate charge is ideal for high frequency applications, as it makes switching faster and less power is consumed. The FDMA410NZ is most suitable for use in applications such as power supplies, switching power amplifiers, motor controllers, and programmable logic devices. Its low gate charge operation is also suitable for applications that require high frequency pulses, like pulse-width modulation (PWM) systems. The FDMA410NZ operates in a “N-Channel” design, meaning the gate is connected to a source on one side, while the drain is connected on the other. This is a three terminal device (negative power rail, positive power rail, and the gate of device) and works in a relatively similar fashion as a BJT resistor. The flow of electrons from the source to the drain is controlled by the voltage applied to the gate. If a positive gate voltage is applied, electrons are attracted from the source towards the drain, and thus a current ends up flowing from drain to the source. In summary, the FDMA410NZ is a general purpose low gate charge type N-Channel FET MOSFET with positive and very low gate threshold voltage. It features a fast switching action, has a drain-source voltage at 30 volts, a gate to source voltage at ±20 volts, drain current up to 40A and is most suitable for use in applications requiring high frequency pulses. Its low gate charge makes it excellent for high frequency and high current applications, while its ±120 micron gate oxide feature makes it useable to frequencies of up to 200 MHz.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description