
Allicdata Part #: | FDMA905PFSTR-ND |
Manufacturer Part#: |
FDMA905P |
Price: | $ 0.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 12V 6-MLP 2X2 |
More Detail: | P-Channel 12V 10A (Ta) 2.4W (Ta) Surface Mount 6-M... |
DataSheet: | ![]() |
Quantity: | 3000 |
1 +: | $ 0.30000 |
10 +: | $ 0.29100 |
100 +: | $ 0.28500 |
1000 +: | $ 0.27900 |
10000 +: | $ 0.27000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 6-VDFN Exposed Pad |
Supplier Device Package: | 6-MicroFET (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3405pF @ 6V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 6V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 10A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FDMA905P are designed to function as efficient circuit components in consumer and industrial applications. The device is a metal-oxide-semiconductor field-effect transistor (MOSFET) with single-gate structure and a very wide voltage range of 0.3V to 6V. Its most commonly used voltage range is from 0.7V to 6V. The device comes as an N-type, which means it has a source and drain of negative back bias and a gate that bridge the two. It is normally used as a switch, amplifying current while allowing low-voltage, low-current signals to control a larger switching operation.
The device can be used as a switch in a variety of different circuit configurations, such as in amplifier circuits, analog logic circuits, and mixed-signal circuits. Additionally, it can also be used to create simple logic gates or as a switch in digital circuits. In some of the more advanced applications, the device can be used to create analog and mixed-signal circuitry, such as in motor control systems, level shifting of signals and current limiters among others.
The working principle and process behind the device involves the transfer of current through the N-type MOSFET and the subsequent hold-up of electrical power on the gate in order to control the flow of current through the MOSFET. When the gate of the MOSFET is charged to a potential higher than that of the source and drain, a channel forms, allowing current to flow between the two. When the gate voltage drops, the channel is blocked, ceasing the current flow and effectively turning the device off.
The main advantage of using a FDMA905P MOSFET as opposed to other types of transistors is its low input current requirement, making it less prone to leakage, and its fast switching speed. It also has a very low gate-to-drain capacitance, allowing for a fast response time. As a result, the FDMA905P can be used in various applications where speed of operation and compact size are important parameters. Furthermore, due to its low input current requirement, it can be employed for power Delivery and Control applications.
In conclusion, FDMA905P is a versatile and efficient component, capable of providing fast switching speed, low power consumption, and fast response time. Its wide voltage range as well as its low-current requirement make it attractive for use in a variety of circuits, most notably in amplifiers, analog circuits, and digital circuits.
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