FDMA1032CZ

Series:	PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	3.7A, 3.1A
Rds On (Max) @ Id, Vgs:	68 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	340pF @ 10V
Power - Max:	700mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-VDFN Exposed Pad
Supplier Device Package:	6-MicroFET (2x2)

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FDMA1032CZ Application Field and Working Principle.The FDMA1032CZ is a monolithic integrated circuit which consists of a combination of a few transistors. It is mainly used in the field of signal processing and power amplifiers. Its working principle is based on the basic principle of field-effect transistors (FETs). A field-effect transistor (FET) is a three-terminal electronic device which acts as a switch or an amplifier. It has two terminals known as the Source and Drain, and a third terminal known as the Gate. FETs are fundamental building blocks of electronics and can be used in many applications, from power management to signal processing. The main difference between FETs and conventional bipolar transistors is that FETs use electrostatic fields to control their operation instead of the electric current used by bipolar transistors. This gives FETs their low power consumption and high switching speed. The FDMA1032CZ is an array of monolithic complementary FETs. It is designed to provide increased performance in high frequency applications such as Class-D audio amplifiers, RF amplifiers and DC-DC converters. Its array of FETs can operate at frequencies up to 200 MHz.The FDMA1032CZ has two output stages, the drain and the source, which provides an optimal output swing. This helps to maximize efficiency and reduce harmonics and distortion. Additionally, the FDMA1032CZ features an array of carefully chosen FETs designed to minimize distortion and maximize power output.The FDMA1032CZ has two main working principles: 1. The first working principle is the voltage-controlled capacitive gain. This involves applying a voltage to the gate, which then controls the capacitance between the drain and the source. This capacitance affects the drain-to-source impedance, which in turn affects the gain of the FET. 2. The second working principle is the voltage-controlled capacitive load. This involves applying a voltage to the gate, which then controls the capacitance between the drain and the source. This capacitance affects the impedance of the load, which in turn affects the frequency response of the FET. The combination of these two working principles results in a high-performance and efficient amplifier that is able to deliver high-fidelity audio and video signals with minimal distortion. This makes the FDMA1032CZ an ideal device for a variety of applications. In conclusion, the FDMA1032CZ is a high-performance integrated circuit which combines the advantages of FETs with its array of monolithic complementary FETs. It offers low power consumption and high switching speed, as well as excellent frequency response characteristics. Furthermore, its two working principles enable it to provide an optimal output swing, which helps to maximize efficiency and reduce harmonics and distortion. Ultimately, its excellent performance in a variety of applications makes the FDMA1032CZ an ideal choice for signal processing and power amplifier applications.

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