FDMA2002NZ_F130

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The FDMA2002NZ_F130 is a field-effect transistor (FET) module consisting of two N- channel enhancement-mode power field-effect transistors (MOSFETs) with monolithic cell. It is especially designed for use in SMPS, DC/DC converters and switch mode applications where high efficiency, Ultra-low noise and low voltage stress are required.

This FET module has drain source breakdown voltage of 130V and drain source on-state resistance (RDS(ON)) of 15mΩ at VGS=10V. The reduced on-state resistance of this MOSFET transistor helps to reduce the switching time and power dissipation, thus handily increases the efficiency of the system. Moreover, the internal cells feature low gate threshold voltage of 1.9V and fast switching times of 19nsec, resulting in low noise operation.

The FDMA2002NZ_F130 offers a wide range of applications, such as motor control, switch mode power supply controllers, AC to DC and DC to DC converters, and also ideal for high frequency switching mode in the industrial and telecommunications fields.

The FET module\'s working principle is to control the electric current passing through the device by passing a voltage between its source and gate electrodes. This voltage influences the current passing between the drain and the source, thus regulating the amount of energy passing through the transistor. This is achieved by the MOSFET\'s ability to modulate electric current and voltage, thereby allowing voltage and current to be controlled with a much greater precision than power transistors can achieve. The FDMA2002NZ_F130 is able to enable much faster switching than other MOSFETs, due to its smaller size and larger internal cells.

The Fourier Device MOSFET Array 2002NZ_F130 is a power device specifically designed for high efficiency, noise-reduction and low-voltage stress operation. Its low resistance and high-voltage characteristics make it an ideal solution for SMPS, DC/DC converters and switch mode applications, for nearly any voltage or current requirements.

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