FDMA2002NZ Allicdata Electronics
Allicdata Part #:

FDMA2002NZTR-ND

Manufacturer Part#:

FDMA2002NZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 30V 2.9A 6-MICROFET
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 2.9A 650mW Sur...
DataSheet: FDMA2002NZ datasheetFDMA2002NZ Datasheet/PDF
Quantity: 27000
Stock 27000Can Ship Immediately
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 123 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Power - Max: 650mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDMA2002NZ is a dual N-Channel enhancement mode power field effect transistor array package. It consists of two N-Channel field effect transistors (FETs) arranged in a single package. TheseFETs are commonly used for power applications such as motor and lighting control, load or line switching, and power factor correction.

The FDMA2002NZ provides superior performance due to its increased speed and improved thermal characteristics. The device can also withstand higher voltages and temperatures than standard FETs. This makes it ideal for use in applications with demanding electrical and thermal requirements.

The FDMA2002NZ operates by modulating the amount of channel current that passes through the gate-channel contact, modulating the resistance of the channel. This distinguishes the device from standard FETs which rely on the gate-to-channel voltage to control channel current. The FDMA2002NZ is able to regulate the physical transistors more effectively than FETs. The transistors provide a higher level of accuracy, faster response time, and improved thermal stability.

The FDMA2002NZ is designed for operation at higher voltages and temperatures than ordinary FETs. This makes it ideal for use in high power applications such as motor control, where the device must withstand large voltage and temperature variations. The FDMA2002NZ is also suitable for other power applications, such as white goods, HVAC, and automotive.

The FDMA2002NZ can be used as a gate driver in a range of power applications. It can also be used as an alternative to a standard FET array in applications that require higher performance and stability. The device is typically used to protect sensitive electronic components and ensure a power application’s reliability.

The FDMA2002NZ is a versatile, high-performance power FET array package. It provides higher speed, improved thermal characteristics, and better control than standard FETs. The device is suitable for a range of power applications and offers superior performance compared to conventional FETs. It is an ideal choice for providing reliable operation in extreme conditions.

The specific data is subject to PDF, and the above content is for reference

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