Allicdata Part #: | FDMA86151LTR-ND |
Manufacturer Part#: |
FDMA86151L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 3.3A 6-MLP |
More Detail: | N-Channel 100V 3.3A (Ta) 2.4W (Ta) Surface Mount 6... |
DataSheet: | FDMA86151L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-MicroFET (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.3nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 88 mOhm @ 3.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.3A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMA86151L is a N-channel enhancement-mode MOSFET that is specifically designed to operate at ultra high speed switching. It is mainly used in high frequency switch circuits and specifically for power management applications. The device has an integration of both low drain-source on resistance and low gate charge, making it an ideal choice for applications such as high-frequency DC/DC converters, point-of-load converters, as well as backlight inverters.
FDMA86151L is a single N-channel enhancement-mode MOSFET device. It consists of one N-channel power MOS field-effect transistor, one Schottky diode and two parasitic bipolar transistors in a single package. It is designed to be operated in the enhancement mode, which means that the channel between the source and drain will only be conducting electricity when a positive biasing voltage greater than the threshold voltage is applied to the gate.
The functioning of FDMA86151L is based on the principle of majority carrier devices, where the current is controlled by the flow of electrons. The device has a low on-state resistance, which can handle a substantial amount of current when on. The gate-source voltage (Vgs) needs to be set to a proper value for the device to operate correctly, typically between the ranges of 4.5V to 14V for an FDMA86151L.
An important feature of FDMA86151L is its steering circuit and shield design. The steering circuitry helps in controlling the leakage current between the source and drain. This shield also helps in suppressing TURN-ON and TURN-OFF noise. The combination of this steering circuit and shield design makes it an ideal choice for high frequency switching applications, where switching speeds of up to 10MHz are possible.
FDMA86151L can be used in a wide range of applications, including power management, motor control, switching regulators, and DC-DC conversion. It can also be used in high-frequency switching applications, such as wireless charging, high-speed data rate interfaces, and load switch applications.
In conclusion, FDMA86151L is a versatile N-channel MOSFET device with an integration of both a low drain-source on resistance and a low gate charge, making it highly suitable for high frequency switch circuits and power management applications. It also features a steering circuitry and shield design, which makes it an ideal choice for high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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