Allicdata Part #: | FDMA008P20LZOSTR-ND |
Manufacturer Part#: |
FDMA008P20LZ |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CHANNEL 20V 12A 6PQFN |
More Detail: | P-Channel 20V 12A (Ta) 2.4W (Ta) Surface Mount 6-P... |
DataSheet: | FDMA008P20LZ Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10522 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Package / Case: | 6-PowerWDFN |
Supplier Device Package: | 6-PQFN (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4383pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 2.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMA008P20LZ is a high voltage PFET transistor developed by FDMS. This type of FET can be used for many applications in industrial and commercial manufacturing. The purpose of this article is to provide an overview of its application field and working principle.
Application Field: The FDMA008P20LZ is primarily used in industrial and commercial applications that require a high voltage transistor with low power dissipation. Examples of these applications include motor control, precision current regulation, and power factor control in power electronics. In addition, it can also be used in various types of communication systems, such as radios and television sets.
Working Principle: The FDMA008P20LZ utilizes a special construction of two N-channel devices connected in parallel. This type of transistor is often referred to as an Enhancement Mode Field Effect Transistor (EMFET). This arrangement allows for a greater current carrying capacity and power dissipation than is available with standard transistors. In operation, the POFET functions as a high-side switch, turning on when a gate-source bias voltage is applied to the gate terminal. As a result, the current will flow from the drain to the source. The gate-source voltage can range from 0V to 20V and the drain current from 2mA up to 10A.
The FDMA008P20LZ has a wide range of functions and applications, making it an ideal choice for any high voltage, low power dissipation device. Its specific features make it especially suitable for precision current regulation, motor control, and power factor control. In addition, it offers enhanced performance in various types of communication systems, such as radios and television sets. For these reasons, it is a popular choice for many industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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