Allicdata Part #: | FDMA510PZTR-ND |
Manufacturer Part#: |
FDMA510PZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 7.8A 6-MICROFET |
More Detail: | P-Channel 20V 7.8A (Ta) 2.4W (Ta) Surface Mount 6-... |
DataSheet: | FDMA510PZ Datasheet/PDF |
Quantity: | 6000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 6-VDFN Exposed Pad |
Supplier Device Package: | 6-MicroFET (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1480pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 7.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 7.8A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMA510PZ is a N-channel MOSFET (metal-oxide-silicon field effect transistor) device. This device is particularly useful in the field of power management and in the realm of switched-mode power supplies. Its low Ron and low gate charge FETs make it ideal for switching DC-DC converters, allowing for fast efficiency changes with only a small current required to switch it on or off.
In terms of its construction, the FDMA510PZ MOSFET is made up of a single-die semiconductor process with a floating base, source, and drain connection. This MOSFET is constructed with a planar shoulder-type structure, with an optimized oxide thickness across the transistor. It also has a built-in anti-parallel diode for ESD protection.
The working principle of the FDMA510PZ is fairly simple. The gate voltage is controlled by an external voltage source. This controls the voltage that is necessary to switch the FET on and off. If the gate voltage is greater than the threshold voltage, then it switches on. If the gate voltage is less than the threshold voltage, then it switches off.
In terms of its application field, the FDMA510PZ is particularly suitable for applications that require low on-resistance, low gate charge FETs. This includes power management applications such as high-efficiency low-voltage switched-mode power supplies and DC motor-control systems. Its low Ron and low gate charge FETs make it ideal for applications with high-density power switching, such as multi-phase DC-DC converters, as well as for high-density gate drivers.
In conclusion, the FDMA510PZ is an N-channel MOSFET device with an optimized oxide thickness and a built-in anti-parallel diode for ESD protection. It is suitable for a wide range of applications, including power management and high-density gate drivers. This FET is easily controlled by an external voltage source, making it ideal for switching DC-DC converters or any other applications that require fast efficiency changes.
The specific data is subject to PDF, and the above content is for reference
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