FDMA410NZT Discrete Semiconductor Products |
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Allicdata Part #: | FDMA410NZTOSTR-ND |
Manufacturer Part#: |
FDMA410NZT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 9.5A 6-ULMP |
More Detail: | N-Channel 20V 9.5A (Ta) 2.4W (Ta) Surface Mount 6-... |
DataSheet: | FDMA410NZT Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 6-UDFN Exposed Pad |
Supplier Device Package: | 6-MicroFET (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1310pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 9.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 9.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMA410NZT is a single P-Channel power MOSFET designed to handle relatively large loads of up to 10A and 60V. Due to its low on-resistance and low gate threshold voltage design, it is particularly suitable for applications such as power supplies, lighting controls, and other power management designs.
Application Field
The FDMA410NZT is designed for a wide range of applications. Most notably, it is suitable for power management designs, such as AC/DC converters, P-MOSFET gate drivers and level shifting networks. This MOSFET is also well-suited for LED lighting and dimming circuitry thanks to its low-current circuit design and its ability to switch relatively large loads of up to 10A. In addition, this MOSFET can be used in various automotive, industrial and communication applications.
Working Principle
The FDMA410NZT MOSFET operates on the principles of P-channel power MOSFETs. It typically comprises three terminals: the gate, the drain and the source. The gate terminal is used to control the flow of current between the drain and the source terminals. When a positive voltage is applied to the gate terminal, the internal MOSFET channel is created, enabling current flow between the drain and the source.
The FDMA410NZT\'s low on-resistance (RDS(ON)) of 5.5Ω and its low gate threshold voltage of 4.5V make it particularly useful for power management applications. The low on-resistance ensures that the power losses due to the MOSFET switching are minimized. Likewise, the low gate threshold voltage means that the voltage required to switch the MOSFET on is relatively low. This makes it suitable for applications were the control signal is unpowered and the current must be switched on and off quickly.
The FDMA410NZT is able to handle a relatively large load of up to 10A and 60V, making it suitable for a wide range of applications. Its wide temperature range of -55˚C to 150˚C, meanwhile, adds to its versatility, allowing it to be used in applications such as automotive and industrial designs, where temperatures can vary significantly.
Conclusion
The FDMA410NZT is a single P-Channel power MOSFET designed for a wide range of applications. It is particularly useful for power management designs due to its low on-resistance and low gate threshold voltage. It is able to handle relatively large loads of up to 10A and 60V, and its wide temperature range of -55˚C to 150˚C makes it suitable for a wide range of applications including automotive applications.
The specific data is subject to PDF, and the above content is for reference
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