FDMA7632 Discrete Semiconductor Products |
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Allicdata Part #: | FDMA7632TR-ND |
Manufacturer Part#: |
FDMA7632 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 9A MICROFET2X2 |
More Detail: | N-Channel 30V 9A (Ta) 2.4W (Ta) Surface Mount 6-Mi... |
DataSheet: | FDMA7632 Datasheet/PDF |
Quantity: | 69000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 6-VDFN Exposed Pad |
Supplier Device Package: | 6-MicroFET (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDMA7632 is a type of Field Effect Transistor (FET) commonly used in communication and computer systems. A FET is a MOSFET (metal-oxide-semiconductor field-effect transistor) specially designed for high-frequency applications. The FDMA7632 is a single-gate FET that is capable of operating at frequencies up to 76MHz. It offers high output power, low noise and wide dynamic range, making it suitable for applications in radio receivers, TV receivers, transceivers, and microwave systems.
The FDMA7632 is a high-voltage N-channel FET. It has a continuous drain-source current of 50mA and a maximum drain-source voltage of 70V. Its gate can handle voltages up to 12V. It is constructed with a dielectric gate and drain isolation which provide excellent isolation between its terminals. This allows it to be used in applications that require low noise and high speed performance.
The FDMA7632 has a number of features that make it suitable for communications and computer applications. It has a low capacitance-to-gate voltage ratio, which allows it to operate at high frequencies without any speed degradation. It also has a low noise figure, which reduces interference from other electrical components. Additionally, it has a low gate-source voltage drop, which helps reduce power consumption.
The working principle behind the FDMA7632 is based on the MOSFET mechanism. When the gate voltage is increased, the electric field between the drain and the source increases. This causes current to flow between the drain and the source. This current flow is according to the following equation:
I DS = K(VGS - VT )2
Where I DS is the drain-source current, K is the transconductance parameter, VGS is the gate-source voltage, and VT is the threshold voltage.
The FDMA7632 is well suited to applications in communications and computer systems. It can be used in transceivers, microwave systems, and receivers, where it can provide high output power, low noise, and wide dynamic range. It can also be used in video switching and signal processing applications, thanks to its excellent high-frequency performance.
The FDMA7632 is a reliable and efficient FET for communications and computer systems. It offers a low capacitance-to-gate voltage ratio, a low noise figure and a low gate-source voltage drop, making it suitable for high-speed applications. It can also be used in video switching and signal processing systems. Additionally, its dielectric gate and drain isolation provides excellent isolation between its terminals, allowing it to be used in applications where noise and speed performance is critical.
The specific data is subject to PDF, and the above content is for reference
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