Allicdata Part #: | FDMA1025PTR-ND |
Manufacturer Part#: |
FDMA1025P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 3.1A MLP2X2 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 3.1A 700mW Sur... |
DataSheet: | FDMA1025P Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A |
Rds On (Max) @ Id, Vgs: | 155 mOhm @ 3.1A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 10V |
Power - Max: | 700mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-VDFN Exposed Pad |
Supplier Device Package: | 6-MicroFET (2x2) |
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The FDMA1025P is a transistor array circuit consisting of two N channel enhancement-mode MOSFETs housed in small, low profile SO-8 packages. The device operates from a single 3.3 volt supply and is primarily used in low noise signal amplification applications.
The FDMA1025P has an extended temperature range between -55C and 125C making it suitable for industrial as well as military and aerospace applications. The low-on-resistance of each MOSFET allows for low-level signal manipulation and switching with high frequency isolation. The low noise characteristics of the device complement these features, making it the ideal choice for audio, automotive, and consumer electronic applications.
The FDMA1025P is well-suited for crossover distortion, high input resistance, high output current and sink current, and low noise sound systems. The device is also highly compatible with standard logic circuits and can be used to create compact switching arrays. Other applications include instrumentation amplifier stages, motor drivers, and voltage level shift circuits.
The FDMA1025P works by using a dual complementary MOSFET (metal oxide semiconductor field-effect transistor) setup inside the package. The first transistor of the device is an N-type FET (NFET). This device is designed so that its drain and gate terminals share the same bias potential, resulting in a low-on-resistance when the gate is powered up. The NFET also provides very low output capacitance and high input impedance, which helps to reduce noise and crosstalk when used in sensitive applications.
The second type of MOSFET (PFET) contained within the package is a P-type FET. This device has the opposite effect to the NFET, as its drain and gate terminals are biased differently. This creates a high-on-resistance when the gate is powered up, allowing for higher current ratings and a wider impedance range. Together, this dual MOSFET setup is known as a complementary pair, as it utilizes the advantages of both types of transistors.
The FDMA1025P is an ideal choice for a wide variety of applications, due to its low noise, low input capacitance, high input impedance and high current ratings. Its extended temperature range makes it suitable for both industrial as well as military and aerospace applications, while its compatibility with standard logic circuits make it the perfect solution for a variety of low-noise signal amplification applications.
The specific data is subject to PDF, and the above content is for reference
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