FDMA6023PZT Discrete Semiconductor Products

Series:	PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	3.6A
Rds On (Max) @ Id, Vgs:	60 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	885pF @ 10V
Power - Max:	700mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	6-MicroFET (2x2)

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The FDMA6023PZT is a highly advanced field-effect transistor array that is designed to deliver an extremely low-power, high-speed electrical output. This highly efficient device is utilized in a wide range of applications including computing, automotive, and industrial applications. The device utilizes a unique combination of three field-effect transistors to provide a low-power, high-speed output on a single chip. In this article, we will discuss the application fields and working principles of the FDMA6023PZT.The FDMA6023PZT is a high-frequency field-effect transistor array that is used in a variety of applications. It is most commonly used in digital circuits for its high speed and low power capabilities. The device consists of three field-effect transistors that are interconnected to create a low-power, high speed output on a single chip. The transistors are interconnected using an inverted bandgap stage at the input, resulting in an extremely low power output. The transistors are also connected to a common-gate structure output stage, resulting in exceptionally low noise and distortion.The FDMA6023PZT also features a wide voltage range that allows it to be used in a variety of applications. This wide voltage range has enabled the device to be used in a range of computing, automotive, and industrial environment. In addition, the device has a high speed switching capability, making it ideal for high frequency applications. Additionally, it has wide input common-mode range, making it suitable for use with a wide array of processing signals.In terms of its working principle, the FDMA6023PZT operates by transferring electrical current from its input to its output. It does this by utilizing the principles of transistors, which are conductors that can be used to modify an electrical voltage. The devices utilizes an inverted bandgap stage at the input, which sets the voltage threshold. When the electrical current is above the threshold level, the transistors will switch and allow the current to flow. The common-gate stage output then amplifies this current before it is delivered to the output.The FDMA6023PZT also utilizes a variety of safety and protection features, such as over-current, over-voltage, reverse polarity, and thermal protection. These features allow the device to be used in a variety of different environments and applications, as it is able to protect itself from potential damage.In conclusion, the FDMA6023PZT is a highly efficient, low-power field-effect transistor array that is used in a variety of applications. The device utilizes three field-effect transistors that are connected to an inverted bandgap stage at the input and a common-gate structure output stage for low power and high speed output. The device also utilizes a variety of safety and protection features to protect it from potential damage. The FDMA6023PZT is an ideal device for use in digital circuits and other applications where low-power, high-speed output is desired.

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