Allicdata Part #: | FDMA8051LTR-ND |
Manufacturer Part#: |
FDMA8051L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V 6-MLP |
More Detail: | N-Channel 40V 10A (Tc) 2.4W (Ta) Surface Mount 6-M... |
DataSheet: | FDMA8051L Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-MicroFET (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1260pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDMA8051L is a single-switch field effect transistor (FET) designed for use in modern microprocessor-based systems. It has a number of features that make it particularly well-suited for applications such as automotive and telecommunication systems, including high-current operation, low on resistance, high-temperature tolerance and low-voltage operation.
The FDM A8051L uses the principle of majority carrier-based conduction in order to operate. This means that the majority of current flowing through the transistor is electrical charge carriers, such as electrons, that move along semiconductor pathways due to the application of an electric field. As such, the number of electrons that are available to conduct current with each unit of applied electric field is known as the majority carrier concentration. The FDM A8051L has a majority carrier concentration of approximately 3.2x10 20 electrons/cm3.
The FDM A8051L is also characterized by low gate leakage, which indicates that very little gate current flows when it is turned off. This attribute makes it ideal for applications that require low power consumption and high performance, such as telecom equipment. Additionally, the FDM A8051L offers high on-resistance and low reverse leakage, making it well-suited for low voltage operation.
Overall, the FDM A8051L is a reliable and versatile single-switch FET ideal for use in microprocessor-based systems, automotive, and telecom applications. It is designed to operate in high temperatures and with low voltage, while offering low gate leakage and high on-resistance. Its majority carrier-based conduction results in excellent current performance and reliability. As such, it has become a popular choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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