FDS8958

Series:	PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	7A, 5A
Rds On (Max) @ Id, Vgs:	28 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	789pF @ 10V
Power - Max:	2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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Introduction

The FDS8958 is a multi-channel power MOSFET array with a robust and versatile design for a wide range of applications. It is a 4-terminal device that can be used in a variety of consumer, industrial and automotive products. Its main feature is that it can handle significant current levels while remaining very compact and efficient. This makes it ideal for applications where space is limited but high current is required.

Application Field

The FDS8958 is suitable for a wide range of applications, thanks to its flexibility and versatility. It can be used in various consumer and home electronics applications, such as air conditioning and cooling systems, medical devices and instruments, motor control and solenoid valves, power supplies and UPS systems. It is also suitable for automotive applications, such as engine control, motors and actuators, vehicle lighting and signaling, and fuel pumps.

Working Principle

The working principle of the FDS8958 is based on simple physics. The device consists of three metal-oxide-semiconductor field-effect transistors (MOSFETs) connected in parallel. The terminals of the device are drain, gate, source and control. The control terminal is connected to the gate terminal, which is used to adjust its conductivity. The source terminal is connected to ground, and the drain terminal is connected to the load. When the gate terminal is triggered by an input voltage, the drain terminal is opened, and current is allowed to flow through the device. This is known as saturation. Conversely, when the gate terminal is not triggered, the drain terminal is shut off, and no current can flow through the device. This is known as cutoff. The device has a relatively low on-state resistance, which means it can carry high currents efficiently.

Advantages

One of the main advantages of the FDS8958 is its high power efficiency. Thanks to its low on-state resistance, it can carry currents up to 300mA without draining too much energy. This makes it ideal for applications that require high currents but also need to be efficient. The device also offers fast switching times, making it suitable for applications that require fast responses. Additionally, it is also suitable for harsh environments, since it is rated for operation up to 150°C.

Conclusion

The FDS8958 is a multi-channel power MOSFET array with a robust and versatile design, making it suitable for a wide range of applications. With its high power efficiency and fast switching times, it can be used in consumer, industrial and automotive products. It is also suitable for harsh environments, since it is rated for operation up to 150°C.

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